5秒后页面跳转
SI1557DH-E3 PDF预览

SI1557DH-E3

更新时间: 2024-09-16 15:51:11
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
9页 91K
描述
TRANSISTOR 1200 mA, 12 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN, FET General Purpose Small Signal

SI1557DH-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:12 V最大漏极电流 (Abs) (ID):0.41 A
最大漏极电流 (ID):1.2 A最大漏源导通电阻:0.235 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL AND P-CHANNEL最大功率耗散 (Abs):0.6 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI1557DH-E3 数据手册

 浏览型号SI1557DH-E3的Datasheet PDF文件第2页浏览型号SI1557DH-E3的Datasheet PDF文件第3页浏览型号SI1557DH-E3的Datasheet PDF文件第4页浏览型号SI1557DH-E3的Datasheet PDF文件第5页浏览型号SI1557DH-E3的Datasheet PDF文件第6页浏览型号SI1557DH-E3的Datasheet PDF文件第7页 
Si1557DH  
Vishay Siliconix  
New Product  
N- and P-Channel 1.8-V (G-S) MOSFET  
PRODUCT SUMMARY  
FEATURES  
D TrenchFETr Power MOSFETs  
D Thermally Enhanced SC-70 Package  
D Fast Switching to Minimize Gate and  
Switching Losses  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.235 @ V = 4.5 V  
GS  
1.3  
1.2  
N-Channel  
P-Channel  
12  
0.280 @ V = 2.5 V  
GS  
0.340 @ V = 1.8 V  
1.0  
GS  
APPLICATIONS  
0.535 @ V  
0.880 @ V  
= -4.5 V  
= -2.5 V  
= -1.8 V  
-0.86  
-0.67  
-0.56  
GS  
GS  
GS  
D Baseband DC/DC Converter Switch for  
Portable Electronics  
-12  
1.26 @ V  
SOT-363  
SC-70 (6-LEADS)  
S
1
G
1
D
2
1
2
3
6
D
1
Marking Code  
EC XX  
5
4
G
Lot Traceability  
and Date Code  
2
Part # Code  
S
2
Top View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
N-Channel  
P-Channel  
5 secs Steady State  
5 secs  
Steady State  
Parameter  
Symbol  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
12  
-12  
DS  
V
V
GS  
"8  
T
= 25_C  
= 85_C  
1.3  
0.9  
1.2  
0.8  
- 0.86  
-0.62  
-0.77  
-0.55  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
3
-2  
DM  
a
Continuous Source Current (Diode Conduction)  
I
0.5  
0.6  
0.3  
0.39  
0.47  
0.25  
-0.5  
0.6  
0.3  
-0.39  
0.47  
0.25  
S
T
= 25_C  
= 85_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 5 sec  
Steady State  
Steady State  
170  
220  
105  
210  
265  
125  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71944  
S-21684—Rev. B, 30-Sep-02  
www.vishay.com  
1

与SI1557DH-E3相关器件

型号 品牌 获取价格 描述 数据表
SI1557DH-T1-E3 VISHAY

获取价格

Small Signal Field-Effect Transistor, N-Channel and P-Channel, Metal-oxide Semiconductor F
SI1563DH VISHAY

获取价格

Complementary 20-V (D-S) Low-Threshold MOSFET
SI1563DH_08 VISHAY

获取价格

Complementary 20-V (D-S) Low-Threshold MOSFET
SI1563DH_10 VISHAY

获取价格

Complementary 20 V (D-S) Low-Threshold MOSFET
SI1563DH-E3 VISHAY

获取价格

TRANSISTOR 1130 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 P
SI1563DH-T1 VISHAY

获取价格

Complementary 20 V (D-S) Low-Threshold MOSFET
SI1563DH-T1-E3 VISHAY

获取价格

Complementary 20 V (D-S) Low-Threshold MOSFET
SI1563DH-T1-GE3 VISHAY

获取价格

TRANSISTOR 1130 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FR
SI1563DL VISHAY

获取价格

TRANSISTOR SMALL SIGNAL, FET, SC-70, 6 PIN, FET General Purpose Small Signal
SI1563EDH VISHAY

获取价格

Complementary 20-V (D-S) Low-Threshold MOSFET