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SI1555DL_10 PDF预览

SI1555DL_10

更新时间: 2024-09-16 09:26:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
12页 235K
描述
Complementary Low-Threshold MOSFET Pair

SI1555DL_10 数据手册

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Si1555DL  
Vishay Siliconix  
Complementary Low-Threshold MOSFET Pair  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
Definition  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
0.70  
0.385 at VGS = 4.5 V  
0.630 at VGS = 2.5 V  
0.600 at VGS = - 4.5 V  
0.850 at VGS = - 2.5 V  
1.200 at VGS = - 1.8 V  
TrenchFET® Power MOSFET  
Compliant to RoHS Directive 2002/95/EC  
N-Channel  
P-Channel  
20  
- 8  
0.54  
- 0.60  
- 0.50  
- 0.42  
SOT-363  
SC-70 (6-LEADS)  
S
1
G
1
D
2
1
2
3
6
5
D
1
Marking Code  
RB XX  
G
2
Lot Traceability  
and Date Code  
4
S
2
Part # Code  
Top View  
Ordering Information: Si1555DL-T1-E3 (Lead (Pb)-free)  
Si1555DL-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
N-Channel  
P-Channel  
Steady State  
Parameter  
Symbol  
VDS  
Unit  
5 s  
Steady State  
5 s  
Drain-Source Voltage  
Gate-Source Voltage  
20  
- 8  
8
V
VGS  
12  
TA = 25 °C  
TA = 85 °C  
0.70  
0.50  
0.66  
0.48  
- 0.60  
- 0.43  
- 0.57  
- 0.41  
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
IDM  
IS  
Pulsed Drain Current  
1.0  
Continuous Source Current (Diode Conduction)a  
0.25  
0.30  
0.16  
0.23  
0.27  
0.14  
- 0.25  
0.30  
- 0.23  
0.27  
TA = 25 °C  
TA = 85 °C  
Maximum Power Dissipationa  
PD  
W
0.16  
0.14  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
360  
Maximum  
415  
Unit  
t 5 s  
Maximum Junction-to-Ambienta  
RthJA  
Steady State  
Steady State  
400  
460  
°C/W  
RthJF  
Maximum Junction-to-Foot (Drain)  
300  
350  
Note:  
a. Surface mounted on 1" x 1" FR4 board.  
Document Number: 71079  
S10-1054-Rev. E, 03-May-10  
www.vishay.com  
1

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