5秒后页面跳转
SI1555DL-T1-E3 PDF预览

SI1555DL-T1-E3

更新时间: 2024-09-16 06:11:31
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管光电二极管PC
页数 文件大小 规格书
8页 111K
描述
Complementary Low-Threshold MOSFET Pair

SI1555DL-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.34Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:989697
Samacsys Pin Count:6Samacsys Part Category:Undefined or Miscellaneous
Samacsys Package Category:SOT23 (6-Pin)Samacsys Footprint Name:SC-70 6 LEADS
Samacsys Released Date:2017-11-21 10:52:23Is Samacsys:N
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):0.57 A最大漏极电流 (ID):0.66 A
最大漏源导通电阻:0.385 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICONBase Number Matches:1

SI1555DL-T1-E3 数据手册

 浏览型号SI1555DL-T1-E3的Datasheet PDF文件第2页浏览型号SI1555DL-T1-E3的Datasheet PDF文件第3页浏览型号SI1555DL-T1-E3的Datasheet PDF文件第4页浏览型号SI1555DL-T1-E3的Datasheet PDF文件第5页浏览型号SI1555DL-T1-E3的Datasheet PDF文件第6页浏览型号SI1555DL-T1-E3的Datasheet PDF文件第7页 
Si1555DL  
Vishay Siliconix  
Complementary Low-Threshold MOSFET Pair  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
Pb-free  
Available  
0.385 @ V = 4.5 V  
0.70  
0.54  
GS  
N-Channel  
P-Channel  
20  
0.630 @ V = 2.5 V  
GS  
0.600 @ V = 4.5 V  
0.60  
0.50  
0.42  
GS  
0.850 @ V = 2.5 V  
8  
GS  
1.200 @ V = 1.8 V  
GS  
SOT-363  
SC-70 (6-LEADS)  
Marking Code  
RB XX  
S
1
G
1
D
2
1
2
3
6
5
D
1
Lot Traceability  
and Date Code  
G
2
Part # Code  
4
S
2
Ordering Information: Si1555DL-T1  
Si1555DL-T1—E3 (Lead (Pb)-Free)  
Top View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
N-Channel  
P-Channel  
5 secs Steady State  
5 secs  
Steady State  
Parameter  
Symbol  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
8  
DS  
GS  
V
V
"12  
"8  
T
= 25_C  
= 85_C  
"0.70  
"0.50  
"0.66  
"0.48  
0.60  
0.43  
0.57  
0.41  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
"1.0  
DM  
a
Continuous Source Current (Diode Conduction)  
I
0.25  
0.30  
0.16  
0.23  
0.27  
0.14  
0.25  
0.30  
0.23  
0.27  
S
T
= 25_C  
= 85_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
0.16  
0.14  
Operating Junction and Storage Temperature Range  
T , T  
55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 5 sec  
Steady State  
Steady State  
360  
400  
300  
415  
460  
350  
a
Maximum Junction-to-Ambient  
R
R
thJA  
_C/W  
Maximum Junction-to-Foot (Drain)  
thJF  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71079  
S-50245—Rev. D, 21-Feb-05  
www.vishay.com  
1

SI1555DL-T1-E3 替代型号

型号 品牌 替代类型 描述 数据表
SI1551DL-T1-E3 VISHAY

类似代替

Complementary 20-V (D-S) MOSFET

与SI1555DL-T1-E3相关器件

型号 品牌 获取价格 描述 数据表
SI1555DL-T1-GE3 VISHAY

获取价格

TRANSISTOR 660 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FRE
SI1557DH VISHAY

获取价格

N- and P-Channel 1.8-V (G-S) MOSFET
SI1557DH-E3 VISHAY

获取价格

TRANSISTOR 1200 mA, 12 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 P
SI1557DH-T1-E3 VISHAY

获取价格

Small Signal Field-Effect Transistor, N-Channel and P-Channel, Metal-oxide Semiconductor F
SI1563DH VISHAY

获取价格

Complementary 20-V (D-S) Low-Threshold MOSFET
SI1563DH_08 VISHAY

获取价格

Complementary 20-V (D-S) Low-Threshold MOSFET
SI1563DH_10 VISHAY

获取价格

Complementary 20 V (D-S) Low-Threshold MOSFET
SI1563DH-E3 VISHAY

获取价格

TRANSISTOR 1130 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 P
SI1563DH-T1 VISHAY

获取价格

Complementary 20 V (D-S) Low-Threshold MOSFET
SI1563DH-T1-E3 VISHAY

获取价格

Complementary 20 V (D-S) Low-Threshold MOSFET