是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.84 | Is Samacsys: | N |
最大漏极电流 (Abs) (ID): | 0.57 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
最大功率耗散 (Abs): | 0.3 W | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
SI1553CDL-T1-GE3 | VISHAY |
类似代替 |
TRANSISTOR 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FRE | |
SI1563EDH-T1-E3 | VISHAY |
类似代替 |
Complementary 20-V (D-S) Low-Threshold MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI1555DL-T1-E3 | VISHAY |
获取价格 |
Complementary Low-Threshold MOSFET Pair | |
SI1555DL-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 660 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FRE | |
SI1557DH | VISHAY |
获取价格 |
N- and P-Channel 1.8-V (G-S) MOSFET | |
SI1557DH-E3 | VISHAY |
获取价格 |
TRANSISTOR 1200 mA, 12 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 P | |
SI1557DH-T1-E3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, N-Channel and P-Channel, Metal-oxide Semiconductor F | |
SI1563DH | VISHAY |
获取价格 |
Complementary 20-V (D-S) Low-Threshold MOSFET | |
SI1563DH_08 | VISHAY |
获取价格 |
Complementary 20-V (D-S) Low-Threshold MOSFET | |
SI1563DH_10 | VISHAY |
获取价格 |
Complementary 20 V (D-S) Low-Threshold MOSFET | |
SI1563DH-E3 | VISHAY |
获取价格 |
TRANSISTOR 1130 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 P | |
SI1563DH-T1 | VISHAY |
获取价格 |
Complementary 20 V (D-S) Low-Threshold MOSFET |