Datasheet > SI1555DL_08

SI1555DL_08

更新时间： 2024-09-16 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	111K
描述
Complementary Low-Threshold MOSFET Pair

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SI1555DL_08 数据手册

Si1555DL

Vishay Siliconix

Complementary Low-Threshold MOSFET Pair

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

Pb-free

Available

0.385 @ V = 4.5 V

0.70

0.54

N-Channel

P-Channel

0.630 @ V = 2.5 V

0.600 @ V = −4.5 V

−0.60

−0.50

−0.42

0.850 @ V = −2.5 V

−8

1.200 @ V = −1.8 V

SOT-363

SC-70 (6-LEADS)

Marking Code

RB XX

Lot Traceability

and Date Code

Part # Code

Ordering Information: Si1555DL-T1

Si1555DL-T1—E3 (Lead (Pb)-Free)

Top View

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

N-Channel

P-Channel

5 secs Steady State

5 secs

Steady State

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

−8

"12

= 25_C

= 85_C

"0.70

"0.50

"0.66

"0.48

−0.60

−0.43

−0.57

−0.41

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

"1.0

Continuous Source Current (Diode Conduction)

0.25

0.30

0.16

0.23

0.27

0.14

−0.25

0.30

−0.23

0.27

= 25_C

= 85_C

Maximum Power Dissipation

0.16

0.14

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

360

400

300

415

460

350

Maximum Junction-to-Ambient

thJA

_C/W

Maximum Junction-to-Foot (Drain)

thJF

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71079

S-50245—Rev. D, 21-Feb-05

www.vishay.com

12 3 4 5 6 7 8

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