SI1539CDL

更新时间： 2024-11-06 09:26:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
16页	241K
描述
N- and P-Channel 30 V (D-S) MOSFET

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SI1539CDL 数据手册

Si1539CDL

Vishay Siliconix

N- and P-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

I_D(A)^aQ_g(Typ.)

Definition

0.388 at V_GS= 10 V

0.525 at V_GS= 4.5 V

0.890 at V_GS= - 10 V

1.7 at V_GS= - 4.5 V

0.7

•

TrenchFET^®Power MOSFET

100 % R_gTested

N-Channel

P-Channel

0.55

0.6

- 0.5

0.8

- 30

APPLICATIONS

- 0.3

•

DC/DC Converter

•

Load Switch

SOT-363

SC-70 (6-LEADS)

Marking Code

RG XX

Lot Traceability

and Date Code

Part #

Code

Top View

Ordering Information: Si1539CDL-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

N-Channel

P-Channel

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 30

V_GS

T_C= 25 °C

T_C= 70 °C

0.7

0.6

- 0.5

- 0.4

Continuous Drain Current (T_J= 150 °C)

I_D

0.7^{b, c}

- 0.4^{b, c}

T_A= 25 °C

0.5^{b, c}

- 0.4^{b, c}

T_A= 70 °C

T_C= 25 °C

T_A= 25 °C

0.3

- 0.3

I_S

Source-Drain Current Diode Current

Pulsed Drain Current

0.2^{b, c}

- 0.2^{b, c}

- 1

I_DM

T_C= 25 °C

0.34

0.22

0.34

0.22

_C= 70 °C

_A= 25 °C

P_D

Maximum Power Dissipation

0.29^{b, c}

0.18^{b, c}

0.29^{b, c}

0.18^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

N-Channel

P-Channel

Parameter

Symbol

R_thJA

Unit

Typ.

Max.

Typ.

Max.

438

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

t  10 s

365

308

438

370

365

308

°C/W

R_thJF

Steady State

370

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 486 °C/W (N-Channel) and 486 °C/W (P-Channel).

Document Number: 67469

S11-0238-Rev. A, 14-Feb-11

www.vishay.com

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