Datasheet > SI1499DH

SI1499DH

更新时间： 2024-09-15 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	106K
描述
P-Channel 1.2-V (G-S) MOSFET

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SI1499DH 数据手册

Si1499DH

Vishay Siliconix

New Product

P-Channel 1.2-V (G-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

Ultra-Low On-Resistance

RoHS Compliant

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ)

_D(A)^c

0.078 at V_GS= - 4.5 V

0.095 at V_GS= - 2.5 V

0.115 at V_GS= - 1.8 V

0.153 at V_GS= - 1.5 V

0.424 at V_GS= - 1.2 V

- 1.6

RoHS

COMPLIANT

- 8

10.5 nC

APPLICATIONS

Load Switch for Portable Devices

•

- 1.6^b

- Guaranteed Operation at V_GS= 1.2 V

Critical for Optimized Design and Longer

Battery Life

SOT-363

SC-70 (6-LEADS)

Marking Code

BI XX

Lot Traceability

and Date Code

Part #

Code

Top View

Ordering Information: Si1499DH-T1-E3 (Lead (Pb)-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 8

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

-1.6^c

- 1.6^c

- 1.6^{a, b, c}

- 6.5^c

- 1.6^c

- 1.3^{a, b}

2.78

T_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)^{a, b}

I_D

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source-Drain Diode Current^{a, b}

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

_C= 70 °C

_A= 25 °C

1.78

Maximum Power Dissipation^{a, b}

P_D

2.5^{a, b}

1^{a, b}

- 55 to 150

260

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{c, d}

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{a, d}

R_thJA

t ≤ 5 sec

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Steady State

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 5 sec.

c. Package limited.

d. Maximum under Steady State conditions is 125 °C/W.

Document Number: 73338

S-61963-Rev. C, 09-Oct-06

www.vishay.com

12 3 4 5 6

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