Si1480BDH
Vishay Siliconix
www.vishay.com
N-Channel 100 V (D-S) MOSFET
FEATURES
• TrenchFET® Gen IV power MOSFET
SC-70 (6 leads)
SOT-363 Single
S
• 100 % Rg and UIS tested
4
D
• Material categorization: for definitions of
5
D
6
compliance
please
see
www.vishay.com/doc?99912
3
G
D
APPLICATIONS
• Load switches
2
D
1
D
• DC/DC converters
• Power management
Top View
G
Marking Code: AVXX
• LED backlighting
PRODUCT SUMMARY
VDS (V)
S
100
0.212
0.270
1.86
N-Channel MOSFET
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 4.5 V
Qg typ. (nC)
ID (A) a
2.38
Configuration
Single
ORDERING INFORMATION
Package
SOT-363
Lead (Pb)-free and halogen-free
Si1480BDH-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
100
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
20
TC = 25 °C
C = 70 °C
2.38 a
T
1.9
Continuous drain current (TJ = 150 °C) a
ID
TA = 25 °C
TA = 70 °C
1.8 b, c
1.4 b, c
7
A
Pulsed drain current (t = 300 μs)
Avalanche current
IDM
IAS
3
L = 0.1 mH
Repetitive avalanche energy
EAS
0.45
mJ
A
T
C = 25 °C
2.3
1.3 b, c
Continuous source-drain diode current
IS
TA = 25 °C
T
C = 25 °C
C = 70 °C
2.6
T
1.7
Maximum power dissipation a
PD
W
TA = 25 °C
TA = 70 °C
1.5 b, c
0.97 b, c
-55 to +150
Operating junction and storage temperature range
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient b, d
t 5 s
RthJA
RthJF
62
37
82
47
°C/W
Maximum junction-to-foot (drain)
Steady state
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 130 °C/W
S23-0037-Rev. A, 30-Jan-2023
Document Number: 62196
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000