5秒后页面跳转
Si1480BDH PDF预览

Si1480BDH

更新时间: 2024-11-22 14:55:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 944K
描述
N-Channel 100 V (D-S) MOSFET

Si1480BDH 数据手册

 浏览型号Si1480BDH的Datasheet PDF文件第2页浏览型号Si1480BDH的Datasheet PDF文件第3页浏览型号Si1480BDH的Datasheet PDF文件第4页浏览型号Si1480BDH的Datasheet PDF文件第5页浏览型号Si1480BDH的Datasheet PDF文件第6页浏览型号Si1480BDH的Datasheet PDF文件第7页 
Si1480BDH  
Vishay Siliconix  
www.vishay.com  
N-Channel 100 V (D-S) MOSFET  
FEATURES  
• TrenchFET® Gen IV power MOSFET  
SC-70 (6 leads)  
SOT-363 Single  
S
• 100 % Rg and UIS tested  
4
D
• Material categorization: for definitions of  
5
D
6
compliance  
please  
see  
www.vishay.com/doc?99912  
3
G
D
APPLICATIONS  
• Load switches  
2
D
1
D
• DC/DC converters  
• Power management  
Top View  
G
Marking Code: AVXX  
• LED backlighting  
PRODUCT SUMMARY  
VDS (V)  
S
100  
0.212  
0.270  
1.86  
N-Channel MOSFET  
RDS(on) max. () at VGS = 10 V  
RDS(on) max. () at VGS = 4.5 V  
Qg typ. (nC)  
ID (A) a  
2.38  
Configuration  
Single  
ORDERING INFORMATION  
Package  
SOT-363  
Lead (Pb)-free and halogen-free  
Si1480BDH-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
100  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
V
VGS  
20  
TC = 25 °C  
C = 70 °C  
2.38 a  
T
1.9  
Continuous drain current (TJ = 150 °C) a  
ID  
TA = 25 °C  
TA = 70 °C  
1.8 b, c  
1.4 b, c  
7
A
Pulsed drain current (t = 300 μs)  
Avalanche current  
IDM  
IAS  
3
L = 0.1 mH  
Repetitive avalanche energy  
EAS  
0.45  
mJ  
A
T
C = 25 °C  
2.3  
1.3 b, c  
Continuous source-drain diode current  
IS  
TA = 25 °C  
T
C = 25 °C  
C = 70 °C  
2.6  
T
1.7  
Maximum power dissipation a  
PD  
W
TA = 25 °C  
TA = 70 °C  
1.5 b, c  
0.97 b, c  
-55 to +150  
Operating junction and storage temperature range  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
TYPICAL  
MAXIMUM  
UNIT  
Maximum junction-to-ambient b, d  
t 5 s  
RthJA  
RthJF  
62  
37  
82  
47  
°C/W  
Maximum junction-to-foot (drain)  
Steady state  
Notes  
a. Package limited  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 5 s  
d. Maximum under steady state conditions is 130 °C/W  
S23-0037-Rev. A, 30-Jan-2023  
Document Number: 62196  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与Si1480BDH相关器件

型号 品牌 获取价格 描述 数据表
Si1480DH VISHAY

获取价格

N-Channel 100 V (D-S) MOSFET
SI1488DH VISHAY

获取价格

N-Channel 20-V (D-S) MOSFET
SI1488DH-T1-E3 VISHAY

获取价格

N-Channel 20-V (D-S) MOSFET
SI1489EDH VISHAY

获取价格

P-Channel 8 V (D-S) MOSFET
SI1489EDH-T1-GE3 VISHAY

获取价格

P-CHANNEL 8-V (D-S) MOSFET - Tape and Reel
SI1499DH VISHAY

获取价格

P-Channel 1.2-V (G-S) MOSFET
SI1499DH_08 VISHAY

获取价格

P-Channel 1.2-V (G-S) MOSFET
SI1499DH-T1-E3 VISHAY

获取价格

P-Channel 1.2-V (G-S) MOSFET
SI1499DH-T1-GE3 VISHAY

获取价格

P-CHANNEL 1.5V (G-S) MOSFET - Tape and Reel
SI15000M100 NTE

获取价格

SNAP-IN MOUNT ALUMINUM ELECTROLYTIC