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SI1471DH-T1-GE3

更新时间: 2024-11-21 19:45:07
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
12页 255K
描述
P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel

SI1471DH-T1-GE3 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.83
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):2.8 A最大漏极电流 (ID):2.8 A
最大漏源导通电阻:0.1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2.78 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI1471DH-T1-GE3 数据手册

 浏览型号SI1471DH-T1-GE3的Datasheet PDF文件第2页浏览型号SI1471DH-T1-GE3的Datasheet PDF文件第3页浏览型号SI1471DH-T1-GE3的Datasheet PDF文件第4页浏览型号SI1471DH-T1-GE3的Datasheet PDF文件第5页浏览型号SI1471DH-T1-GE3的Datasheet PDF文件第6页浏览型号SI1471DH-T1-GE3的Datasheet PDF文件第7页 
Si1471DH  
Vishay Siliconix  
P-Channel 30 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)c  
Definition  
0.100 at VGS = - 10 V  
0.120 at VGS = - 4.5 V  
0.175 at VGS = - 2.5 V  
- 2.7  
- 2.7  
- 2.7  
TrenchFET® Power MOSFET  
- 30  
6.5 nC  
Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
SOT-363  
SC-70 (6-LEADS)  
Load Switch for Portable Devices  
D
D
G
1
2
3
6
D
D
S
Marking Code  
S
BN XX  
5
4
Lot Traceability  
and Date Code  
G
Part #  
Code  
Top View  
Ordering Information: Si1471DH-T1-E3 (Lead (Pb)-free)  
D
Si1471DH-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
- 30  
12  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
- 2.7c  
- 2.7c  
- 2.8a, b  
- 2.3a, b  
- 8  
TC = 25 °C  
C = 70 °C  
T
Continuous Drain Current (TJ = 150 °C)a, b  
ID  
TA = 25 °C  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current (10 µs Pulse Width)  
Continuous Source-Drain Diode Currenta, b  
TC = 25 °C  
TA = 25 °C  
TC = 25 °C  
TC = 70 °C  
- 2.3  
- 1.25 a, b  
2.78  
1.78  
Maximum Power Dissipationa, b  
PD  
W
1.5a, b  
TA = 25 °C  
1a, b  
- 55 to 150  
260  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)c, d  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
Maximum Junction-to-Ambienta, d  
RthJA  
t 5 s  
60  
34  
80  
45  
°C/W  
RthJF  
Maximum Junction-to-Foot (Drain)  
Steady State  
Notes:  
a. Surface mounted on 1" x 1" FR4 board.  
b. t = 5 s.  
c. Package limited.  
d. Maximum under steady state conditions is 125 °C/W.  
Document Number: 74468  
S10-0646-Rev. C, 22-Mar-10  
www.vishay.com  
1

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