Datasheet > SI1433DH_08

SI1433DH_08

更新时间： 2024-09-14 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	130K
描述
P-Channel 30-V (D-S) MOSFET

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SI1433DH_08 数据手册

New Product

Si1433DH

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFETS: 1.8 V Rated

V_DS(V)

r_DS(on)(Ω)

I_D(A)

- 2.2

- 1.6

Pb-free

•

Thermally Enhanced SC-70 Package

0.150 at V_GS= - 10 V

0.260 at V_GS= - 4.5 V

Available

- 30

RoHS*

APPLICATIONS

COMPLIANT

•

Load Switches

- Notebook PC

- Servers

SOT-363

SC-70 (6-LEADS)

Marking Code

BE XX

Lot Traceability

and Date Code

Part # Code

Top View

Ordering Information: Si1433DH-T1

Si1433DH-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 30

V_GS

T_A= 25 °C

T_A= 85 °C

- 2.2

- 1.7

- 1.9

- 1.4

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

- 8

Continuous Diode Current (Diode Conduction)^a

- 1.4

1.45

0.75

- 0.9

0.95

0.5

T_A= 25 °C

Maximum Power Dissipation^a

P_D

_A= 85 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 5 s

130

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

R_thJA

Steady State

105

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 Board.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72323

S-71951-Rev. B, 10-Sep-07

www.vishay.com

12 3 4 5 6

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