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SI1433DH-T1-GE3 PDF预览

SI1433DH-T1-GE3

更新时间: 2024-09-14 14:44:43
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
6页 114K
描述
P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel

SI1433DH-T1-GE3 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):1.9 A最大漏极电流 (ID):1.9 A
最大漏源导通电阻:0.15 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1.45 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:PURE MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI1433DH-T1-GE3 数据手册

 浏览型号SI1433DH-T1-GE3的Datasheet PDF文件第2页浏览型号SI1433DH-T1-GE3的Datasheet PDF文件第3页浏览型号SI1433DH-T1-GE3的Datasheet PDF文件第4页浏览型号SI1433DH-T1-GE3的Datasheet PDF文件第5页浏览型号SI1433DH-T1-GE3的Datasheet PDF文件第6页 
Si1433DH  
Vishay Siliconix  
P-Channel 30 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
- 2.2  
- 1.6  
Definition  
0.150 at VGS = - 10 V  
0.260 at VGS = - 4.5 V  
TrenchFET® Power MOSFETs: 1.8 V Rated  
Thermally Enhanced SC-70 Package  
Compliant to RoHS Directive 2002/95/EC  
- 30  
APPLICATIONS  
Load Switches  
- Notebook PC  
- Servers  
SOT-363  
SC-70 (6-LEADS)  
D
D
G
1
2
3
6
D
D
S
Marking Code  
5
4
BE XX  
Lot Traceability  
and Date Code  
Part # Code  
Top View  
Ordering Information: Si1433DH-T1-E3 (Lead (Pb)-free)  
Si1433DH-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
5 s  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
- 30  
20  
V
VGS  
TA = 25 °C  
TA = 85 °C  
- 2.2  
- 1.7  
- 1.9  
- 1.4  
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
Pulsed Drain Current  
Continuous Diode Current (Diode Conduction)a  
IDM  
IS  
- 8  
- 1.4  
1.45  
0.75  
- 0.9  
0.95  
0.5  
TA = 25 °C  
Maximum Power Dissipationa  
PD  
W
T
A = 85 °C  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typical  
65  
Maximum  
Unit  
t 5 s  
85  
130  
48  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Foot (Drain)  
Steady State  
Steady State  
105  
38  
°C/W  
RthJF  
Notes:  
a. Surface mounted on 1" x 1" FR4 board.  
Document Number: 72323  
S10-0935-Rev. C, 19-Apr-10  
www.vishay.com  
1

SI1433DH-T1-GE3 替代型号

型号 品牌 替代类型 描述 数据表
SI1473DH-T1-GE3 VISHAY

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P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel

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