Datasheet > SI1441EDH

SI1441EDH

更新时间： 2024-09-14 12:20:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
12页	236K
描述
P-Channel 20 V (D-S) MOSFET

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SI1441EDH 数据手册

New Product

Si1441EDH

Vishay Siliconix

P-Channel 20 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

I_D(A)^a

- 4

Q_g(Typ.)

Definition

TrenchFET^®Power MOSFET

Typical ESD Performance 1500 V

0.041 at V_GS= - 4.5 V

0.054 at V_GS= - 2.5 V

0.100 at V_GS= - 1.8 V

•

- 20

- 4

12.5 nC

100 % R Tested

- 4

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch for Portable Devices

- Cellular Phone

- DSC

SOT-363

SC-70 (6-LEADS)

- Portable Game Console

- MP3

- GPS

Marking Code

B Q X

X X X

Part # code

Top View

Lot Traceability

and Date code

P-Channel MOSFET

Ordering Information: Si1441EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

- 20

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

- 4^a

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

- 4

Continuous Drain Current (T_J= 150 °C)

I_D

- 4^{a, b, c}

- 25

Pulsed Drain Current (t = 300 µs)

I_DM

I_S

- 2.3

T_C= 25 °C

Continuous Source-Drain Diode Current

- 1.3^{b, c}

2.8

_A= 25 °C

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

1.8

Maximum Power Dissipation

P_D

1.6^{b, c}

1.0^{b, c}

- 55 to 150

260

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

R_thJA

Typical

Maximum

Unit

t  5 s

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

R_thJF

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 125 °C/W.

Document Number: 66823

S10-1827-Rev. A, 09-Aug-10

www.vishay.com

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