Datasheet > SI1450DH_08

SI1450DH_08

更新时间： 2024-11-21 06:11:31

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威世 - VISHAY		/
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7页	121K
描述
N-Channel 8-V (D-S) MOSFET

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SI1450DH_08 数据手册

Si1450DH

Vishay Siliconix

New Product

N-Channel 8-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET: 1.5 V Rated

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ)

_D(A)^a

•

100 % R_gTested

4.0^a

0.047 at V_GS= 4.5 V

0.051 at V_GS= 2.5 V

0.058 at V_GS= 1.8 V

0.069 at V_GS= 1.5 V

RoHS

COMPLIANT

APPLICATIONS

Load Switch for Portable Applications

4.24 nC

•

- Guaranteed Operation at V_GS= 1.5 V

Critical for Optimized Design and Space Savings

SOT-363

SC-70 (6-LEADS)

Marking Code

AH XX

Lot Traceability

and Date Code

Part # Code

Top View

Ordering Information: Si1450DH-T1-E3 (Lead (Pb)-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

6.04^a

4.8^a

_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

4.53^a

T_A= 25 °C

T_A= 70 °C

3.62^a

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

2.3

1.3^c

2.78

Continuous Source-Drain Diode Current

_C= 25 °C

_C= 70 °C

1.78

P_D

Maximum Power Dissipation

1.56^{b, c}

1.0^{b, c}

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

- 55 to 150

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Foot (Drain)

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

t ≤ 5 sec

°C/W

Steady State

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 Board.

c. t = 5 sec.

d. Maximum under Steady State conditions is 125 °C/W.

Document Number: 74275

S-62079-Rev. A, 23-Oct-06

www.vishay.com

12 3 4 5 6 7

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