Datasheet > SI1470DH_10

SI1470DH_10

更新时间： 2024-11-21 09:26:15

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威世 - VISHAY		/
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描述
N-Channel 30 V (D-S) MOSFET

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SI1470DH_10 数据手册

Si1470DH

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

4.0^a

4.0

Q_g(Typ.)

Definition

0.066 at V_GS= 4.5 V

0.095 at V_GS= 2.5 V

•

TrenchFET^®Power MOSFET

100 % R_gand UIS Tested

4.85

Compliant to RoHS Directive 2002/95/EC

SOT-363

SC-70 (6-LEADS)

APPLICATIONS

Load Switch

•

Marking Code

AK XX

Lot Traceability

and Date Code

Part # Code

Top View

Ordering Information: Si1470DH-T1-E3 (Lead (Pb)-free)

Si1470DH-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

5.1

4.0

Continuous Drain Current (T_J= 150 °C)^a

I_D

3.8^{b, c}

3.1^{b, c}

Pulsed Drain Current

Avalanche Current

I_DM

I_AS

L = 0.1 mH

T_C= 25 °C

Repetitive Avalanche Energy

E_AS

2.3

1.3^{b, c}

Continuous Source-Drain Diode Current

I_S

T_A= 25 °C

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

2.8

1.8

Maximum Power Dissipation^a

P_D

1.5^{b, c}

1.0^{b, c}

- 55 to 150

Operating Junction and Storage Temperature Range

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

R_thJA

R_thJF

t ≤ 5 s

°C/W

Steady State

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 125 °C/W.

Document Number: 74277

S10-0646-Rev. B, 22-Mar-10

www.vishay.com

12 3 4 5 6 7

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