Datasheet > SI1469DH_08

SI1469DH_08

更新时间： 2024-11-21 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	109K
描述
P-Channel 20-V (G-S) MOSFET

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SI1469DH_08 数据手册

Si1469DH

Vishay Siliconix

New Product

P-Channel 20-V (G-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

_D(A)^c

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ)

0.080 at V_GS= - 10 V

0.100 at V_GS= - 4.5 V

0.155 at V_GS= - 2.5 V

- 1.6

APPLICATIONS

RoHS

- 20

5.5 nC

COMPLIANT

•

Load Switch for Portable Devices

SOT-363

SC-70 (6-LEADS)

Marking Code

BL XX

Lot Traceability

and Date Code

Part #

Code

Top View

Ordering Information: Si1469DH-T1-E3 (Lead (Pb)-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 20

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

-1.6^c

- 1.6^c

- 1.6^{a, b, c}

- 6.5^c

T_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)^{a, b}

I_D

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source-Drain Diode Current^{a, b}

- 1.6^c

- 1.6^{a, b, c}

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

T_C= 70 °C

2.78

1.78

Maximum Power Dissipation^{a, b}

P_D

2.5^{a, b}

T_A= 25 °C

1^{a, b}

- 55 to 150

260

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{c, d}

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{a, d}

R_thJA

t ≤ 5 sec

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Steady State

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 5 sec.

c. Package limited.

d. Maximum under Steady State conditions is 125 °C/W.

Document Number: 74441

S-70195-Rev. A, 29-Jan-07

www.vishay.com

12 3 4 5 6 7

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