Si1442DH
Vishay Siliconix
www.vishay.com
N-Channel 12 V (D-S) MOSFET
FEATURES
• TrenchFET® power MOSFET
SC-70 (6 leads)
SOT-363 Single
S
4
• 100 % Rg tested
D
5
• Material categorization:
D
6
For definitions of compliance please see
www.vishay.com/doc?99912
3
APPLICATIONS
G
2
D
• Load switch and battery
switch for portable devices
D
1
D
Top View
• DC/DC converters
Marking code: AT
• Low on-resistance for low
voltage drop
PRODUCT SUMMARY
VDS (V)
G
12
0.020
0.024
0.030
13.1
4
RDS(on) max. () at VGS = 4.5 V
RDS(on) max. () at VGS = 2.5 V
RDS(on) max. () at VGS = 1.8 V
Qg typ. (nC)
S
N-Channel MOSFET
ID (A) a
Configuration
Single
ORDERING INFORMATION
Package
SC-70
Lead (Pb)-free and halogen-free
Si1442DH-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
12
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
8
TF = 25 °C
TF = 70 °C
TA = 25 °C
TA = 70 °C
4 a
4 a
4 a, b, c
4 a, b, c
20
Continuous drain current (TJ = 150 °C)
ID
A
Pulsed drain current (t = 300 μs)
IDM
IS
TF = 25 °C
TA = 25 °C
TF = 25 °C
TF = 70 °C
TA = 25 °C
TA = 70 °C
2.3
1.3 b, c
Continuous source-drain diode current
2.8
1.8
Maximum power dissipation
PD
W
1.56 b, c
1 b, c
-55 to +150
260
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b, d
SYMBOL
RthJA
TYPICAL
MAXIMUM
UNIT
t 5 s
60
34
80
45
°C/W
Maximum junction-to-foot (drain)
Steady state
RthJF
Notes
a. TF = 25 °C, package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 125 °C/W
S12-0546-Rev. A, 12-Mar-12
Document Number: 63772
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000