New Product
Si1443EDH
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
VDS (V)
RDS(on) ()
ID (A)
- 4a
- 4a
Qg (Typ.)
•
•
•
•
TrenchFET® Power MOSFET
0.054 at VGS = - 10 V
0.062 at VGS = - 4.5 V
0.085 at VGS = - 2.5 V
Typical ESD Performance 1500 V HBM
- 30
8.6 nC
100 % R Tested
g
- 3.4
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
Load Switch for Portable Devices
- Cellular Phone
- DSC
SOT -363
SC-70 (6-LEADS)
- Portable Game Console
- MP3
D
1
2
3
6
5
D
D
S
- GPS
•
Soft Turn-on Load Switch
S
D
G
Marking Code
4
G
R
B T X
X X X
Top View
Ordering Information:
Si1443EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
Part # code
Lot Traceability
and Date code
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
- 30
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
12
- 4a
- 4a
- 4a, b, c
- 3.4b, c
- 15
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
A
Pulsed Drain Current (t = 300 µs)
IDM
IS
- 2.3
TC = 25 °C
Continuous Source-Drain Diode Current
- 1.3b, c
2.8
T
A = 25 °C
C = 25 °C
T
TC = 70 °C
A = 25 °C
1.8
Maximum Power Dissipation
PD
W
1.6b, c
1b, c
T
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Symbol
RthJA
Typical
Maximum
Unit
t 5 s
60
34
80
45
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Document Number: 67849
S11-0869-Rev. A, 02-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000