Datasheet > SI1433DH

SI1433DH

更新时间： 2024-09-13 22:33:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	44K
描述
P-Channel 30-V (D-S) MOSFET

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SI1433DH 数据手册

Si1433DH

Vishay Siliconix

New Product

P-Channel 30-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFETS: 1.8-V Rated

PRODUCT SUMMARY

D Thermally Enhanced SC-70 Package

APPLICATIONS

V_DS(V)

r_DS(on)(W)

I_D(A)

0.150 @ V = -10 V

-2.2

-1.6

D Load Switches

-30

0.260 @ V = -4.5

Notebook PCs

Servers

SOT-363

SC-70 (6-LEADS)

Marking Code

BE XX

Lot Traceability

and Date Code

Part # Code

Top View

Ordering Information: Si1433DH-T1

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-30

"20

= 25_C

= 85_C

-1.9

-1.4

-2.2

-1.7

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

-8

Continuous Diode Current (Diode Conduction)

-1.4

1.45

0.75

-0.9

0.95

0.5

= 25_C

= 85_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

105

130

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72323

S-31668—Rev. A, 11-Aug-03

www.vishay.com

12 3 4 5

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