Datasheet > SI1428EDH

SI1428EDH

更新时间： 2024-09-14 09:26:15

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描述
N-Channel 30 V (D-S) MOSFET

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SI1428EDH 数据手册

New Product

Si1428EDH

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

I_D(A)^a

Q_g(Typ.)

Definition

0.045 at V_GS= 10 V

0.049 at V_GS= 4.5 V

0.060 at V_GS= 2.5 V

•

TrenchFET^®Power MOSFET

Typical ESD Protection 2000 V HBM

100 % R_gTested

4 nC

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Portable Devices

- Load Switch

- Battery Switch

SOT-363

SC-70 (6-LEADS)

•

Load Switch for Motors, Relays and Solenoids

Marking Code

AS XX

Lot Traceability

and Date Code

Part # Code

Top View

Ordering Information: Si1428EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

4^a

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

4^a

Continuous Drain Current (T_J= 150 °C)

I_D

4^{a, b, c}

3.7^{b, c}

2.3^a

1.3^{b, c}

2.8

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

T_C= 25 °C

T_A= 25 °C

Continuous Source-Drain Diode Current

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

1.8

Maximum Power Dissipation

P_D

1.56^{b, c}

1.0^{b, c}

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

Typical

Maximum

Unit

R_thJA

t  5 s

°C/W

R_thJF

Steady State

Maximum Junction-to-Foot (Drain)

Notes:

a. Package limited, T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 125 °C/W.

Document Number: 67825

S11-0861-Rev. A, 02-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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