Datasheet > SI1426DH_10

SI1426DH_10

更新时间： 2024-09-14 09:26:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	244K
描述
N-Channel 30 V (D-S) MOSFET

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SI1426DH_10 数据手册

Si1426DH

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

3.6

Definition

0.075 at V_GS= 10 V

0.115 at V_GS= 4.5 V

•

TrenchFET^®Power MOSFET

Thermally Enhanced SC-70 Package

PWM Optimized

2.9

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Boost Converter in Portable Devices

- Low Gate Charge (3 nC)

•

Low Current Synchronous Rectifier

SOT-363

SC-70 (6-LEADS)

Marking Code

AC XX

Lot Traceability

and Date Code

Part # Code

Top View

Ordering Information: Si1426DH-T1-E3 (Lead (Pb)-free)

Si1426DH-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

_A= 85 °C

3.6

2.6

2.8

2.1

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

Continuous Diode Current (Diode Conduction)^a

1.3

1.6

0.8

1.0

0.5

T_A= 25 °C

T_A= 85 °C

Maximum Power Dissipation^a

P_D

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 5 s

125

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

R_thJA

Steady State

100

°C/W

R_thJF

Note:

a. Surface mounted on 1" x 1" FR4 board.

Document Number: 71805

S10-0935-Rev. B, 19-Apr-10

www.vishay.com

12 3 4 5 6 7...10

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