New Product
Si1427EDH
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
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Halogen-free According to IEC 61249-2-21
I
D (A)a
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
Definition
- 2.0e
- 2.0e
- 2.0e
- 0.5
0.064 at VGS = - 4.5 V
0.085 at VGS = - 2.5 V
0.110 at VGS = - 1.8 V
0.165 at VGS = - 1.5 V
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TrenchFET® Power MOSFET
100 % R Tested
g
- 20
7.6 nC
Typical ESD Performance 2000 V
Built in ESD Protection with Zener Diode
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
Load Switch for Portable Devices
- Cellular Phone
- DSC
- Portable Game Console
- MP3
SOT-363
SC-70 (6-LEADS)
S
D
D
G
1
2
3
6
D
D
S
- GPS
Marking Code
5
4
BR XX
G
Lot Traceability
and Date Code
R
Part # Code
Top View
Ordering Information: Si1427EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
- 20
8
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
V
- 2.0a, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
- 2.0e
Continuous Drain Current (TJ = 150 °C)
ID
- 2.0b, c, e
- 2.0b, c, e
- 8
- 2.0a, e
- 1.3b, c
2.8
A
Pulsed Drain Current
IDM
IS
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
TC = 25 °C
T
C = 70 °C
A = 25 °C
1.8
Maximum Power Dissipation
PD
W
1.56b, c
1b, c
T
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
Symbol
RthJA
Typical
60
34
Maximum
Unit
t ≤ 5 s
Steady State
80
45
°C/W
RthJF
Notes:
a. TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
e. Package limited.
Document Number: 65526
S11-0453-Rev. B, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000