Datasheet > SI1422DH

SI1422DH

更新时间： 2024-09-11 12:20:35

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威世 - VISHAY		/
页数	文件大小	规格书
12页	264K
描述
N-Channel 12 V (D-S) MOSFET

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SI1422DH 数据手册

New Product

Si1422DH

Vishay Siliconix

N-Channel 12 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)^a

Q_g(Typ.)

Definition

TrenchFET^®Power MOSFET

0.026 at V_GS= 4.5 V

0.030 at V_GS= 2.5 V

0.036 at V_GS= 1.8 V

•

100 % R Tested

7.5 nC

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch, PA Switch and Battery Switch for Portable

Devices

SOT-363

SC-70 (6-LEADS)

•

High Frequency dc-to-dc Converters

Low On-Resistance Switching

Marking Code

AO XX

Lot Traceability

and Date Code

Part # Code

Top View

Ordering Information: Si1422DH-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

4^a

T_F= 25 °C

T_F= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

4^{b, c}

2.3^a

1.3^{b, c}

I_DM

I_S

Pulsed Drain Current

T_F= 25 °C

T_A= 25 °C

T_F= 25 °C

T_F= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Source-Drain Diode Current

2.8

1.8

1.56^{b, c}

Maximum Power Dissipation

P_D

1.0^{b, c}

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 5 s

°C/W

Steady State

R_thJF

Maximum Junction-to-Foot (Drain)

Notes:

a. T_F= 25 °C, package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 125 °C/W.

Document Number: 66701

S10-1287-Rev. A, 31-May-10

www.vishay.com

12 3 4 5 6 7...12

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