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SI1419DH-T1-E3 PDF预览

SI1419DH-T1-E3

更新时间: 2024-09-11 06:11:31
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
6页 97K
描述
P-Channel 200-V (D-S) MOSFET

SI1419DH-T1-E3 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.82
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):0.3 A
最大漏极电流 (ID):0.3 A最大漏源导通电阻:5.1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.56 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI1419DH-T1-E3 数据手册

 浏览型号SI1419DH-T1-E3的Datasheet PDF文件第2页浏览型号SI1419DH-T1-E3的Datasheet PDF文件第3页浏览型号SI1419DH-T1-E3的Datasheet PDF文件第4页浏览型号SI1419DH-T1-E3的Datasheet PDF文件第5页浏览型号SI1419DH-T1-E3的Datasheet PDF文件第6页 
Si1419DH  
Vishay Siliconix  
New Product  
P-Channel 200-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFETS  
D Small, Thermally Enhanced SC-70  
VDS (V)  
rDS(on) (W)  
ID (A)  
Qg (Typ)  
Pb-free  
Available  
Package  
D Ultra Low On-Resistance  
APPLICATIONS  
5.0 @ V = 10 V  
0.38  
0.37  
GS  
200  
4.1  
5.1 @ V = 6 V  
GS  
D Active Clamp Switch in DC/DC Power  
Supplies  
SOT-363  
S
SC-70 (6-LEADS)  
D
D
G
1
6
5
D
D
S
G
Marking Code  
BH XX  
2
3
Lot Traceability  
and Date Code  
4
Part # Code  
D
Top View  
P-Channel MOSFET  
Ordering Information: Si1419DH-T1—E3  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
5 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
200  
DS  
V
V
GS  
"20  
T
= 25_C  
= 85_C  
0.3  
0.38  
0.27  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
0.22  
A
Pulsed Drain Current  
I
0.5  
DM  
a
Continuous Diode Current (Diode Conduction)  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
I
1.3  
0.83  
S
I
AS  
1.9  
L = 0.1 mH  
E
AS  
0.18  
mJ  
T
= 25_C  
= 85_C  
1.56  
0.81  
1.0  
A
a
Maximum Power Dissipation  
P
D
W
T
A
0.52  
Operating Junction and Storage Temperature Range  
T , T  
55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 5 sec  
Steady State  
Steady State  
60  
100  
34  
80  
125  
45  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 73241  
S-50368—Rev. B, 28-Feb-05  
www.vishay.com  
1

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