Datasheet > NTTFD018N08LC

NTTFD018N08LC

更新时间： 2024-11-02 11:15:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	449K
描述
MOSFET, Power, 80V POWERTRENCH® Power Clip Half Bridge Configuration

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中文翻译

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数据手册

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NTTFD018N08LC 数据手册

MOSFET - Symmetrical

Dual N-Channel

80 V, 18 mW, 26 A

NTTFD018N08LC

General Description

This device includes two specialized N−Channel MOSFETs in

a dual package. The switch node has been internally connected to

enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q2) and synchronous (Q1) have been designed

to provide optimal power efficiency.

www.onsemi.com

MAX

I MAX

(BR)DSS

DS(ON)

18 mW @ 10 V

29 mW @ 4.5 V

80 V

26 A

Features

Q1: N−Channel

• Max r

= 18 mW at V = 10 V, I = 7.8 A

GS D

DS(on)

ELECTRICAL CONNECTION

= 29 mW at V = 4.5, I = 6.2 A

DS(on)

GND

LSG

V+

SW GND

GND

Q2: N−Channel

LSG

V+

• Max r

= 18 mW at V = 10 V, I = 7.8 A

GS D

DS(on)

• Max r

= 29 mW at V = 4.5, I = 6.2 A

V+

DS(on)

V+

HSG V+

HSG

• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in

Lower Switching Losses

Dual N-Channel MOSFET

PIN1

• RoHS Compliant

Typical Applications

• 48 V Input Primary Half Bridge

• Communications

• General Purpose Point of Load

PIN1

Bottom

Top

PIN DESCRIPTION

Power Clip 33 Symmetric

(WQFN12)

1, 11, 12

Name

GND (LSS)

LSG

Description

Low Side Source

CASE 510CJ

Low Side Gate

MARKING DIAGRAM

High Side Drain

3, 4, 5, 6

V + (HSD)

HSG

High Side Gate

D018

AYWWZZ

Switching Node, Low Side Drain

8, 9, 10

D018 = Specific Device Code

= Assembly Plant Code

= Numeric Year Code

WW = Work Week Code

ZZ = Assembly Lot Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2

of this data sheet.

Publication Order Number:

January, 2021 − Rev. 4

NTTFD018N08LC/D

12 3 4 5 6 7...9

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