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NTTFS115P10M5 PDF预览

NTTFS115P10M5

更新时间: 2024-11-02 11:13:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 250K
描述
Power MOSFET, P Channel, -100V, -13 A, 120mΩ

NTTFS115P10M5 数据手册

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MOSFET - Power, Single  
P-Channel, WDFN8  
-100 V, 120 mW, -13 A  
NTTFS115P10M5  
Features  
www.onsemi.com  
Small Footprint (3.3 x 3.3 mm) for Compact Design  
These Devices are nonESD Protected  
These Devices are PbFree and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
120 mW @ 10 V  
254 mW @ 6 V  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
100 V  
13 A  
Parameter  
DraintoSource Breakdown Voltage  
GatetoSource Voltage  
Symbol  
Value  
100  
20  
Unit  
V
V
(BR)DSS  
V
GS  
V
Continuous Drain  
Current R (Note 2)  
T
= 25°C  
= 100°C  
= 25°C  
I
13  
8.0  
41  
A
C
D
S
S
1
2
8
7
D
D
q
JC  
T
C
Steady  
State  
Power Dissipation  
(Note 2)  
T
C
P
W
A
D
R
q
JC  
T
C
= 100°C  
16  
S
3
4
6
5
D
D
Continuous Drain  
Current R  
T = 25°C  
A
I
D
2.0  
1.1  
0.9  
q
JA  
G
T = 100°C  
A
(Notes 1, 2)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
W
D
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
0.3  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
137  
A
A
p
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
+150  
°C  
J
stg  
Source Current (Body Diode)  
I
S
34  
A
Single Pulse DraintoSource Avalanche  
E
AS  
41  
mJ  
Energy (I  
= 9.1 A)  
L(pk)  
Lead Temperature Soldering Reflow for Solder-  
ing Purposes (1/8from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
WDFN8  
CASE 511DH  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
3.0  
Unit  
JunctiontoCase Steady State (Note 2)  
JunctiontoAmbient Steady State (Note 2)  
R
°C/W  
q
JC  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
R
134  
q
JA  
2
1. Surfacemounted on FR4 board using a 1 in pad size, 1 oz Cu pad.  
2. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
April, 2020 Rev. 0  
NTTFS115P10M5/D  
 

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