MOSFET - Power, Single
P-Channel, WDFN8
-100 V, 120 mW, -13 A
NTTFS115P10M5
Features
www.onsemi.com
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• These Devices are non−ESD Protected
• These Devices are Pb−Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
120 mW @ −10 V
254 mW @ −6 V
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
−100 V
−13 A
Parameter
Drain−to−Source Breakdown Voltage
Gate−to−Source Voltage
Symbol
Value
−100
20
Unit
V
V
(BR)DSS
V
GS
V
Continuous Drain
Current R (Note 2)
T
= 25°C
= 100°C
= 25°C
I
−13
−8.0
41
A
C
D
S
S
1
2
8
7
D
D
q
JC
T
C
Steady
State
Power Dissipation
(Note 2)
T
C
P
W
A
D
R
q
JC
T
C
= 100°C
16
S
3
4
6
5
D
D
Continuous Drain
Current R
T = 25°C
A
I
D
−2.0
−1.1
0.9
q
JA
G
T = 100°C
A
(Notes 1, 2)
Steady
State
Power Dissipation
T = 25°C
A
P
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
0.3
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
−137
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+150
°C
J
stg
Source Current (Body Diode)
I
S
−34
A
Single Pulse Drain−to−Source Avalanche
E
AS
41
mJ
Energy (I
= −9.1 A)
L(pk)
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
WDFN8
CASE 511DH
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
3.0
Unit
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
R
134
q
JA
2
1. Surface−mounted on FR4 board using a 1 in pad size, 1 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
April, 2020 − Rev. 0
NTTFS115P10M5/D