DATA SHEET
www.onsemi.com
MOSFET - Power, Single
N-Channel, STD Gate, m8FL
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
40 V
1.43 mꢂ @ V = 10 V
178 A
GS
40 V, 1.43 mW, 178 A
N−CHANNEL MOSFET
D (5−8)
NTTFS1D4N04XM
Features
• Low R
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
DS(on)
G (4)
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
S (1,2,3)
Applications
• Motor Drive
• Battery Protection
• Synchronous Rectification
WDFN8
(m8FL)
CASE 511DY
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
MARKING DIAGRAM
Gate−to−Source Voltage
DC
V
GS
20
V
1
Continuous Drain Current
T
= 25°C
= 100°C
= 25°C
I
178
126
83
A
S
S
S
G
D
D
D
D
C
D
1D4N4
AYWWG
G
T
C
Power Dissipation
T
C
P
W
A
D
Continuous Drain Current
R
T = 25°C
A
I
35
DA
ꢀ
JA
1D4N4 = Specific Device Code
T = 100°C
A
25
A
Y
WW
G
= Assembly Location
= Year
Pulsed Drain Current
T
= 25°C,
I
1305
A
C
p
DM
t = 10 ꢁ s
= Work Week
= Pb−Free Package
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
STG
(Note: Microdot may be in either location)
Source Current (Body Diode)
I
71
89
A
S
Single Pulse Avalanche Energy (I = 35 A)
E
AS
mJ
°C
PK
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2023
1
Publication Order Number:
January, 2024 − Rev. 0
NTTFS1D4N04XM/D