Datasheet > NTTFS1D8N02P1E

NTTFS1D8N02P1E

更新时间： 2024-11-02 11:14:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	470K
描述
MOSFET - Power, Single N-Channel, Power33, 25V, 152 A

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NTTFS1D8N02P1E 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel, WDFN8

25 V, 1.3 mW, 150 A

MAX

I MAX

(BR)DSS

DS(ON)

1.3 mW @ 10 V

1.8 mW @ 4.5 V

25 V

150 A

NTTFS1D8N02P1E

Features

NMOS

D (5−8)

• Small Footprint for Compact Design

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

G (4)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

S (1, 2, 3)

Typical Applications

• DC−DC Converters

• Power Load Switch

MARKING

DIAGRAM

• Notebook Battery Management

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

2EMN

AYWWZZ

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

WDFN8

(Power33)

DSS

CASE 483AW

Gate−to−Source Voltage

+16, −12

150

Continuous Drain

Current R

= 25°C

= 85°C

= 25°C

2EMN = Specific Device Code

= Assembly Location

= Year

108

Steady

State

(Note 1)

= Work Week

= Assembly Lot Code

Power Dissipation

(Note 1)

Continuous Drain

Current R

T = 25°C

PIN CONNECTIONS

T = 85°C

Steady

State

(Notes 1, 3)

Power Dissipation

T = 25°C

2.7

(Notes 1, 3)

Continuous Drain

Current R

T = 25°C

T = 85°C

Steady

State

(Notes 2, 3)

Power Dissipation

T = 25°C

0.8

(Notes 2, 3)

Pulsed Drain Current T = 25°C, t = 10 ms

508

117

(Top View)

Single Pulse Drain−to−Source Avalanche

Energy (I = 48.3 A, L = 0.1 mH) (Note 4)

L(pk)

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of

this data sheet.

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

+150

Lead Temperature Soldering Reflow for Sol-

dering Purposes (1/8″ from case for 10 s)

260

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using a 1 in pad size, 2 oz Cu pad.

2. Surface−mounted on FR4 board using minimum pad size, 2 oz Cu pad.

3. The entire application environment impacts the thermal resistance values shown.

They are not constants and are only valid for the particular conditions noted.

Actual continuous current will be limited by thermal & electro− mechanical

application board design. R

is determined by the user’s board design.

4. 100% UIS tested at L = 0.1 mH, I = 32 A.

Publication Order Number:

October, 2022 − Rev. 2

NTTFS1D8N02P1E/D

12 3 4 5 6 7

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