Datasheet > NTTFS2D1N04HLTWG

NTTFS2D1N04HLTWG

更新时间： 2024-11-02 11:15:55

品牌	Logo	应用领域
安森美 - ONSEMI		栅
页数	文件大小	规格书
7页	503K
描述
N-Channel Shielded Gate PowerTrench® MOSFET 40 V, 150 A, 2.1 mΩ

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NTTFS2D1N04HLTWG 数据手册

MOSFET - Single N-Channel

40 V, 2.1 mW, 150 A

NTTFS2D1N04HL

Features

• Max R

= 2.1 mW at V = 10 V, I = 23 A

GS D

DS(on)

= 3.3 mW at V = 4.5 V, I = 18 A

DS(on)

• High Performance Technology for Extremely Low R

DS(on)

www.onsemi.com

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAX

I MAX

(BR)DSS

DS(ON)

Typical Applications

• DC−DC Buck Converters

• Point of Load

• High Efficiency Load Switch and Low Side Switching

• Oring FET

2.1 mW @ 10 V

3.3 mW @ 4.5 V

40 V

150 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

Continuous Drain

= 25°C

150

N−CHANNEL MOSFET

Current R

(Note 1)

Steady

State

Power Dissipation

(Note 1)

Continuous Drain

Current R

T = 25°C

Steady

State

(Notes 1, 2)

Power Dissipation

2.2

(Notes 1, 2)

WDFN8

3.3X3.3, 0.65P

CASE 483AW

Pulsed Drain Current

T = 25°C, t = 10 ms

958

Operating Junction and Storage Temperature

Range

T , T

−55 to

+150

°C

stg

Source Current (Body Diode)

MARKING DIAGRAM

Single Pulse Drain−to−Source Avalanche

126

Energy (I = 29 A, L = 0.3 mH) (Note 3)

S2D1

AYWWZZ

Lead Temperature Soldering Reflow for Sol-

dering Purposes (1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

S2D1 = Specific Device Code

= Assembly Plant Code

= Numeric Year Code

THERMAL RESISTANCE RATINGS

WW = Work Week Code

ZZ = Assembly Lot Code

Parameter

Symbol

Value

1.5

Unit

Junction−to−Case − Steady State (Note 1)

Junction−to−Ambient − Steady State (Note 1)

°C/W

ORDERING INFORMATION

54.8

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

Device

NTTFS2D1N04HLTWG

Package

Shipping†

PQFN8

(Pb−Free) Tape & Reel

3000 /

2. Surface−mounted on FR4 board using 1 in pad size, 1 oz. Cu pad.

3. E of 126 mJ is based on started T = 25°C, I = 29 A, V = 32 V, V =

10 V. 100% test at I = 29 A.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

May, 2020 − Rev. 1

NTTFS2D1N04HL/D

12 3 4 5 6 7

中文翻译

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NTTFS3A08PZTAG	ONSEMI	获取价格	-20 V, -15 A, Single P-Channel, 8FL
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