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NTTFS015P03P8ZTAG PDF预览

NTTFS015P03P8ZTAG

更新时间: 2024-11-01 11:11:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 222K
描述
MOSFET,单 -30V P 沟道

NTTFS015P03P8ZTAG 数据手册

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NTTFS015P03P8Z  
MOSFET – Power, Single,  
P-Channel, m8FL  
-30 V, 7.5 mW  
Features  
Ultra Low R  
www.onsemi.com  
to Improve System Efficiency  
DS(on)  
Advanced Package Technology in 3.3x3.3mm for Space Saving and  
Excellent Thermal Conduction  
V
R
I
D
(BR)DSS  
DS(on)  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
7.5 mW @ 10 V  
12 mW @ 4.5 V  
30 V  
47.6 A  
Typical Applications  
Power Load Switch  
S (1, 2, 3)  
Protection: Reverse Current, Over Voltage, and Reverse Negative  
Voltage  
Battery Management  
G (4)  
PChannel  
MOSFET  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
30  
Unit  
V
D (5, 6, 7, 8)  
V
DSS  
GatetoSource Voltage  
V
"25  
47.6  
34.4  
33.8  
V
GS  
MARKING  
DIAGRAM  
Continuous Drain Cur-  
T
T
T
= 25°C  
= 85°C  
= 25°C  
I
A
C
C
C
D
rent R  
(Notes 1, 2)  
q
JC  
1
Steady  
State  
1
S
S
S
G
D
D
D
D
Power Dissipation R  
(Notes 1, 2)  
P
W
A
q
D
JC  
15P3  
AYWWG  
G
WDFN8  
(m8FL)  
CASE 511AB  
Continuous Drain Cur-  
rent R (Notes 1, 2)  
T = 25°C  
A
I
13.4  
9.6  
2.66  
D
q
JA  
T = 85°C  
A
Steady  
State  
15P3  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
Power Dissipation R  
(Notes 1, 2)  
T = 25°C  
A
P
W
q
D
JA  
WW  
G
= Work Week  
= PbFree Package  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
195  
A
A
p
Operating Junction and Storage Temperature  
T , T  
55 to  
150  
°C  
J
stg  
(Note: Microdot may be in either location)  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
°C  
ORDERING INFORMATION  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
Device  
Package  
Shipping  
NTTFS015P03P8ZTAG  
WDFN8 1500 / Tape &  
THERMAL RESISTANCE MAXIMUM RATINGS  
(PbFree) Reel  
Parameter  
Symbol  
Value  
Unit  
NTTFS015P03P8ZTWG WDFN8 3000 / Tape &  
(PbFree) Reel  
JunctiontoCase Steady State (Drain)  
R
3.7  
°C/W  
q
JC  
(Note 2)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
JunctiontoAmbient Steady State (Note 2)  
R
47  
°C/W  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surfacemounted on FR4 board using a 1 in , 2 oz. Cu pad. Assuming a  
76mm x 76mm x 1.6mm board.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
June, 2019 Rev. 0  
NTTFS015P03P8Z/D  
 

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