Datasheet > NTTFS015P03P8ZTAG

NTTFS015P03P8ZTAG

更新时间： 2024-11-25 11:11:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	222K
描述
MOSFET，单 -30V P 沟道

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NTTFS015P03P8Z

MOSFET – Power, Single,

P-Channel, m8FL

-30 V, 7.5 mW

Features

• Ultra Low R

www.onsemi.com

to Improve System Efficiency

DS(on)

• Advanced Package Technology in 3.3x3.3mm for Space Saving and

Excellent Thermal Conduction

(BR)DSS

DS(on)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

7.5 mW @ −10 V

12 mW @ −4.5 V

−30 V

−47.6 A

Typical Applications

• Power Load Switch

S (1, 2, 3)

• Protection: Reverse Current, Over Voltage, and Reverse Negative

Voltage

• Battery Management

G (4)

P−Channel

MOSFET

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

−30

Unit

D (5, 6, 7, 8)

DSS

Gate−to−Source Voltage

"25

−47.6

−34.4

33.8

MARKING

DIAGRAM

Continuous Drain Cur-

= 25°C

= 85°C

= 25°C

rent R

(Notes 1, 2)

Steady

State

Power Dissipation R

(Notes 1, 2)

15P3

AYWWG

WDFN8

(m8FL)

CASE 511AB

Continuous Drain Cur-

rent R (Notes 1, 2)

T = 25°C

−13.4

−9.6

2.66

T = 85°C

Steady

State

15P3

= Specific Device Code

= Assembly Location

= Year

Power Dissipation R

(Notes 1, 2)

T = 25°C

= Work Week

= Pb−Free Package

Pulsed Drain Current

T = 25°C, t = 10 ms

−195

Operating Junction and Storage Temperature

T , T

−55 to

150

°C

stg

(Note: Microdot may be in either location)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

ORDERING INFORMATION

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

†

Device

Package

Shipping

NTTFS015P03P8ZTAG

WDFN8 1500 / Tape &

THERMAL RESISTANCE MAXIMUM RATINGS

(Pb−Free) Reel

Parameter

Symbol

Value

Unit

NTTFS015P03P8ZTWG WDFN8 3000 / Tape &

(Pb−Free) Reel

Junction−to−Case − Steady State (Drain)

3.7

°C/W

(Note 2)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 1 in , 2 oz. Cu pad. Assuming a

76mm x 76mm x 1.6mm board.

Publication Order Number:

June, 2019 − Rev. 0

NTTFS015P03P8Z/D

12 3 4 5 6 7

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与NTTFS015P03P8ZTAG相关器件

型号	品牌	获取价格	描述	数据表
NTTFS015P03P8ZTWG	ONSEMI	获取价格	MOSFET，单 -30V P 沟道
NTTFS020N06CTAG	ONSEMI	获取价格	Single N−Channel Power MOSFET 60V, 27A, 20.3m
NTTFS022N15MC	ONSEMI	获取价格	Power MOSFET, N Channel, 150V, 37.2 A, 22mΩ
NTTFS030N06CTAG	ONSEMI	获取价格	Single N−Channel Power MOSFET 60V, 27A, 29.7m
NTTFS030N10GTAG	ONSEMI	获取价格	MOSFET Power, Single N-Channel, μ8FL, 100V, 3
NTTFS034N15MC	ONSEMI	获取价格	Power MOSFET, N Channel, 150V, 27 A, 31mΩ
NTTFS080N10GTAG	ONSEMI	获取价格	MOSFET Power, Single N-Channel, μ8FL, 100V, 8
NTTFS115P10M5	ONSEMI	获取价格	Power MOSFET, P Channel, -100V, -13 A, 120mΩ
NTTFS1D2N02P1E	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, Power33, 25V, 1.0mW, 180 A
NTTFS1D4N04XMTAG	ONSEMI	获取价格	MOSFET - Power, SingleN-Channel, STD Gate, Po

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