Datasheet > NTTFS010N10MCLTAG

NTTFS010N10MCLTAG

更新时间： 2024-11-01 11:14:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	367K
描述
Power MOSFET, N Channel, 100V, 50 A, 10.6mΩ

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NTTFS010N10MCLTAG 数据手册

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DATA SHEET

www.onsemi.com

ELECTRICAL CONNECTION

MOSFET - Power,

N-Channel, Shielded Gate,

POWERTRENCH⁾

100 V, 50 A, 10.6 mW

NTTFS010N10MCL

General Description

N-Channel MOSFET

This N−Channel POWETRENCH MOSFET is produced using

onsemi’s advanced POWERTRENCH process that incorporates

Shielded Gate technology. This process has been optimized to

minimize on−state resistance and yet maintain superior switching

performance with best in class soft body diode.

8 7 6 5

D D D D

Features

Pin 1

1 2 3 4

Top

G S S S

Bottom

• Shielded Gate MOSFET Technology

Pin 1

• Max r

= 10.6 mW at V = 10 V, I = 15 A

GS D

DS(on)

WDFN8

= 15.9 mW at V = 4.5 V, I = 12 A

DS(on)

(3.3x3.3, 0.65 P)

CASE 511DY

• 50% Lower Qrr than Other MOSFET Suppliers

• Lowers Switching Noise/EMI

• MSL1 Robust Package Design

• 100% UIL Tested

MARKING DIAGRAM

• RoHS Compliant

N10L

AYWW

Applications

• Primary DC−DC MOSFET

• Synchronous Rectifier in DC−DC and AC−DC

• Motor Drive

N10L

= Device Code

= Assembly Location

= Year Code

= Work Week Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2

of this data sheet.

Publication Order Number:

June, 2022 − Rev. 1

NTTFS010N10MCL/D

12 3 4 5 6 7 8

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