Datasheet > NTTFS3A08PTAG

NTTFS3A08PTAG

更新时间： 2024-11-02 01:16:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
3页	99K
描述
Power MOSFET .20 V, .14 A, Single P.Channel, 8FL

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NTTFS3A08PTAG 数据手册

NTTFS3A08P

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Power MOSFET

−20 V, −14 A, Single P−Channel, m8FL

Features

• Ultra Low R

to Minimize Conduction Losses

• m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal

DS(on)

http://onsemi.com

Conduction

MAX

I MAX

(BR)DSS

DS(on)

• ESD Protection Level of 5 kV per JESD22−A114

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

6.7 mW @ −4.5 V

9.0 mW @ −2.5 V

−20 V

−14 A

Applications

P−Channel MOSFET

• Battery/Switch

• High Side Load Switch

• Optimized for Power Management Applications for Portable

Products such as Media Tablets, Ultrabook PCs and Cellphones

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

Gate−to−Source Voltage

MARKING DIAGRAM

Continuous Drain

T = 25°C

−14

−10

2.2

Current R

(Note 1)

T = 85°C

XXXX

AYWWG

WDFN8

(m8FL)

CASE 511AB

Power Dissipation R

(Note 1)

T = 25°C

Continuous Drain

T = 25°C

−20

−15

4.5

Current R

(Note 1)

≤ 10 s

T = 85°C

Steady

State

XXXX = Specific Device Code

= Assembly Location

= Year

= Work Week

Power Dissipation

≤ 10 s (Note 1)

T = 25°C

Continuous Drain

Current R (Note 2)

T = 25°C

−9

−6

= Pb−Free Package

T = 85°C

(Note: Microdot may be in either location)

Power Dissipation

(Note 2)

T = 25°C

0.84

ORDERING INFORMATION

Pulsed Drain Current

T = 25°C, t = 10 ms

−43

†

Device

Package

Shipping

Operating Junction and Storage Temperature

T ,

−55 to

+150

°C

stg

NTTFS3A08PTAG

WDFN8

(Pb−Free)

1500 / Tape &

Reel

ESD (HBM, JESD22−A114)

ESD

5000

−6

NTTFS3A08PTWG WDFN8

1500 / Tape &

Reel

Source Current (Body Diode)

(Pb−Free)

Lead Temperature for Soldering Purposes

260

°C

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

Publication Order Number:

June, 2012 − Rev. P0

NTTFS3A08P/D

12 3

中文翻译

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与NTTFS3A08PTAG相关器件

型号	品牌	获取价格	描述	数据表
NTTFS3A08PTWG	ONSEMI	获取价格	Power MOSFET .20 V, .14 A, Single P.Channel, 8FL
NTTFS3A08PZ	ONSEMI	获取价格	-20 V, -15 A, Single P-Channel, 8FL
NTTFS3A08PZTAG	ONSEMI	获取价格	-20 V, -15 A, Single P-Channel, 8FL
NTTFS3A08PZTWG	ONSEMI	获取价格	单 P 沟道，功率 MOSFET，-20V，-15A，6.7mΩ
NTTFS3D7N06HLTWG	ONSEMI	获取价格	N-Channel Shielded Gate PowerTrench® MOSFET 6
NTTFS4800N	ONSEMI	获取价格	Power MOSFET 30 V, 32 A, Single N−Chann
NTTFS4800NTAG	ONSEMI	获取价格	Power MOSFET 30 V, 32 A, Single N−Chann
NTTFS4800NTWG	ONSEMI	获取价格	Power MOSFET 30 V, 32 A, Single N−Chann
NTTFS4821N	ONSEMI	获取价格	Power MOSFET 30 V, 57 A, Single N−Channel, u8FL
NTTFS4821NTAG	ONSEMI	获取价格	Power MOSFET 30 V, 57 A, Single N−Channel, u8FL

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