Datasheet > NTTFS030N06CTAG

NTTFS030N06CTAG

更新时间： 2024-09-14 11:15:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	224K
描述
Single N−Channel Power MOSFET 60V, 27A, 29.7mΩ in u8FL

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NTTFS030N06CTAG 数据手册

MOSFET - Power, Single

N-Channel, m8FL

60 V, 29.7 mW, 19 A

NTTFS030N06C

Features

www.onsemi.com

• Small Footprint (3.3 x 3.3 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

(BR)DSS

DS(on)

Compliant

60 V

29.7 mW @ 10 V

19 A

Typical Applications

• Power Tools, Battery Operated Vacuums

• UAV/Drones, Material Handling

• BMS/Storage, Home Automation

N−Channel

D (5 − 8)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

G (4)

DSS

Gate−to−Source Voltage

S (1, 2, 3)

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

MARKING DIAGRAM

(Notes 1, 3)

Steady

State

Power Dissipation

(Note 1)

30NC

AYWWG

WDFN8

(m8FL)

CASE 511AB

= 100°C

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

30NC = Specific Device Code

Power Dissipation

T = 25°C

2.5

1.2

= Assembly Location

= Year

= Work Week

(Notes 1, 2)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

= Pb−Free Package

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

(Note: Microdot may be in either location)

Source Current (Body Diode)

ORDERING INFORMATION

Single Pulse Drain−to−Source Avalanche

Energy (I

= 4.6 A)

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

L(pk)

Lead Temperature Soldering Reflow for Sol-

dering Purposes (1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

January, 2020 − Rev. 1

NTTFS030N06C/D

12 3 4 5 6 7

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与NTTFS030N06CTAG相关器件

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NTTFS030N10GTAG	ONSEMI	获取价格	MOSFET Power, Single N-Channel, μ8FL, 100V, 3
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NTTFS115P10M5	ONSEMI	获取价格	Power MOSFET, P Channel, -100V, -13 A, 120mΩ
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NTTFS1D4N04XMTAG	ONSEMI	获取价格	MOSFET - Power, SingleN-Channel, STD Gate, Po
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NTTFS2D1N04HLTWG	ONSEMI	获取价格	N-Channel Shielded Gate PowerTrench® MOSFET 4
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