Datasheet > NTTFS1D2N02P1E

NTTFS1D2N02P1E

更新时间： 2023-09-03 20:40:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	544K
描述
MOSFET - Power, Single N-Channel, Power33, 25V, 1.0mW, 180 A

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NTTFS1D2N02P1E 数据手册

NTTFS1D2N02P1E

MOSFET - Power, Single

N-Channel, Power33

25 V, 1.0 mW, 180 A

Features

• Small Footprint for Compact Design

www.onsemi.com

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

(BR)DSS

DS(ON)

Compliant

1.0 mW @ 10 V

1.2 mW @ 4.5 V

25 V

180 A

Typical Applications

• DC−DC Converters

• Power Load Switch

NMOS

• Notebook Battery Management

D (5−8)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

G (4)

Gate−to−Source Voltage

+16/−12

180

Continuous Drain

= 25°C

= 85°C

= 25°C

S (1, 2, 3)

Current R

(Note 3)

130

Steady

State

Power Dissipation

(Note 3)

MARKING

DIAGRAM

Pin 1

Continuous Drain

Current R

T = 25°C

T = 85°C

Steady

State

(Notes 1, 3)

2EJN

AYWWZZ

PQFN8

(Power33)

CASE 483AW

Power Dissipation

T = 25°C

2.7

(Notes 1, 3)

Continuous Drain

Current R

T = 25°C

2EJN

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Assembly Lot Code

T = 85°C

Steady

State

(Notes 2, 3)

Power Dissipation

T = 25°C

0.82

(Notes 2, 3)

Pulsed Drain Current

T = 25°C, t = 10 ms

195

202

Single Pulse Drain−to−Source Avalanche

Energy (I = 63.7 A) (Note 4)

L(pk)

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of

this data sheet.

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

+150

Lead Temperature Soldering Reflow for Solder-

ing Purposes (1/8″ from case for 10 s)

260

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using a 1 in pad size, 2 oz Cu pad.

2. Surface−mounted on FR4 board using minimum pad size, 2 oz Cu pad.

3. The entire application environment impacts the thermal resistance values

shown. They are not constants and are only valid for the particular conditions

noted. Actual continuous current will be limited by thermal & electro−

mechanical application board design. R

is determined by the user’s board

design.

4. 100% UIS tested at L = 0.1 mH, I = 40 A.

Publication Order Number:

September, 2019 − Rev. 1

NTTFS1D2N02P1E/D

12 3 4 5 6 7

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