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NTTFS1D2N02P1E

更新时间： 2024-11-02 11:16:11
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 544K
描述
MOSFET - Power, Single N-Channel, Power33, 25V, 1.0mW, 180 A

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NTTFS1D2N02P1E 数据手册

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NTTFS1D2N02P1E  
MOSFET - Power, Single  
N-Channel, Power33  
25 V, 1.0 mW, 180 A  
Features  
• Small Footprint for Compact Design  
www.onsemi.com  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
(BR)DSS  
DS(ON)  
Compliant  
1.0 mW @ 10 V  
1.2 mW @ 4.5 V  
25 V  
180 A  
Typical Applications  
• DC−DC Converters  
• Power Load Switch  
NMOS  
• Notebook Battery Management  
D (5−8)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
25  
Unit  
V
V
DSS  
G (4)  
Gate−to−Source Voltage  
V
GS  
+16/−12  
180  
V
Continuous Drain  
T
T
T
= 25°C  
= 85°C  
= 25°C  
I
D
A
C
C
C
S (1, 2, 3)  
Current R  
(Note 3)  
q
JC  
130  
Steady  
State  
Power Dissipation  
(Note 3)  
P
52  
W
A
D
D
D
MARKING  
DIAGRAM  
R
q
JC  
Pin 1  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
41  
29  
1
q
JA  
T = 85°C  
A
Steady  
State  
(Notes 1, 3)  
2EJN  
AYWWZZ  
PQFN8  
(Power33)  
CASE 483AW  
Power Dissipation  
T = 25°C  
A
P
2.7  
W
A
R
(Notes 1, 3)  
q
JA  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
23  
16  
q
JA  
2EJN  
A
Y
WW  
ZZ  
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Assembly Lot Code  
T = 85°C  
A
Steady  
State  
(Notes 2, 3)  
Power Dissipation  
T = 25°C  
A
P
0.82  
W
R
(Notes 2, 3)  
q
JA  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
A
I
DM  
195  
202  
A
p
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I = 63.7 A) (Note 4)  
L(pk)  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 5 of  
this data sheet.  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
°C  
°C  
J
stg  
+150  
Lead Temperature Soldering Reflow for Solder-  
ing Purposes (1/8″ from case for 10 s)  
T
L
260  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
2
1. Surface−mounted on FR4 board using a 1 in pad size, 2 oz Cu pad.  
2. Surface−mounted on FR4 board using minimum pad size, 2 oz Cu pad.  
3. The entire application environment impacts the thermal resistance values  
shown. They are not constants and are only valid for the particular conditions  
noted. Actual continuous current will be limited by thermal & electro−  
mechanical application board design. R  
is determined by the user’s board  
q
CA  
design.  
4. 100% UIS tested at L = 0.1 mH, I = 40 A.  
AV  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
September, 2019 − Rev. 1  
NTTFS1D2N02P1E/D  
 
1234567

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