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NTTFS3A08PZTWG PDF预览

NTTFS3A08PZTWG

更新时间: 2024-11-02 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 127K
描述
单 P 沟道,功率 MOSFET,-20V,-15A,6.7mΩ

NTTFS3A08PZTWG 数据手册

 浏览型号NTTFS3A08PZTWG的Datasheet PDF文件第2页浏览型号NTTFS3A08PZTWG的Datasheet PDF文件第3页浏览型号NTTFS3A08PZTWG的Datasheet PDF文件第4页浏览型号NTTFS3A08PZTWG的Datasheet PDF文件第5页浏览型号NTTFS3A08PZTWG的Datasheet PDF文件第6页 
NTTFS3A08PZ  
Power MOSFET  
20 V, 15 A, Single PChannel, m8FL  
Features  
Ultra Low R  
to Minimize Conduction Losses  
m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal  
DS(on)  
Conduction  
http://onsemi.com  
ESD Protection Level of 5 kV per JESD22A114  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
Compliant  
6.7 mW @ 4.5 V  
9.0 mW @ 2.5 V  
20 V  
15 A  
Applications  
Battery Switch  
High Side Load Switch  
Optimized for Power Management Applications for Portable  
Products such as Media Tablets, Ultrabook PCs and Cellphones  
PChannel MOSFET  
S
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
DraintoSource Voltage  
Symbol Value Unit  
G
V
20  
8
V
V
A
DSS  
GatetoSource Voltage  
V
GS  
D
Continuous Drain  
T = 25°C  
I
D
15  
11  
2.3  
A
Current R  
(Note 1)  
q
JA  
T = 85°C  
A
MARKING DIAGRAM  
1
Power Dissipation R  
(Note 1)  
T = 25°C  
A
P
W
A
q
D
JA  
1
S
S
S
G
D
D
D
D
3A08  
AYWWG  
G
WDFN8  
(m8FL)  
CASE 511AB  
Continuous Drain  
T = 25°C  
A
I
D
22  
16  
4.9  
Current R  
(Note 1)  
10 s  
q
JA  
T = 85°C  
A
Steady  
State  
Power Dissipation  
10 s (Note 1)  
T = 25°C  
A
P
I
W
A
D
3A08  
A
Y
WW  
G
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= PbFree Package  
R
q
JA  
Continuous Drain  
Current R (Note 2)  
T = 25°C  
A
9  
7  
D
q
JA  
T = 85°C  
A
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
D
0.84  
W
(Note: Microdot may be in either location)  
R
q
JA  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
46  
A
A
p
ORDERING INFORMATION  
Operating Junction and Storage Temperature  
T ,  
stg  
55 to  
+150  
°C  
J
T
Device  
Package  
Shipping  
ESD (HBM, JESD22A114)  
V
5000  
3  
V
A
ESD  
NTTFS3A08PZTAG  
WDFN8  
(PbFree)  
1500 / Tape &  
Reel  
Source Current (Body Diode)  
I
S
NTTFS3A08PZTWG  
WDFN8  
(PbFree)  
5000 / Tape &  
Reel  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
°C  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.  
2. Surfacemounted on FR4 board using the minimum recommended pad size.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
October, 2012 Rev. 2  
NTTFS3A08P/D  
 

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