NTTFS3A08PZ
Power MOSFET
−20 V, −15 A, Single P−Channel, m8FL
Features
• Ultra Low R
to Minimize Conduction Losses
• m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal
DS(on)
Conduction
http://onsemi.com
• ESD Protection Level of 5 kV per JESD22−A114
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
Compliant
6.7 mW @ −4.5 V
9.0 mW @ −2.5 V
−20 V
−15 A
Applications
• Battery Switch
• High Side Load Switch
• Optimized for Power Management Applications for Portable
Products such as Media Tablets, Ultrabook PCs and Cellphones
P−Channel MOSFET
S
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Symbol Value Unit
G
V
−20
8
V
V
A
DSS
Gate−to−Source Voltage
V
GS
D
Continuous Drain
T = 25°C
I
D
−15
−11
2.3
A
Current R
(Note 1)
q
JA
T = 85°C
A
MARKING DIAGRAM
1
Power Dissipation R
(Note 1)
T = 25°C
A
P
W
A
q
D
JA
1
S
S
S
G
D
D
D
D
3A08
AYWWG
G
WDFN8
(m8FL)
CASE 511AB
Continuous Drain
T = 25°C
A
I
D
−22
−16
4.9
Current R
(Note 1)
≤ 10 s
q
JA
T = 85°C
A
Steady
State
Power Dissipation
≤ 10 s (Note 1)
T = 25°C
A
P
I
W
A
D
3A08
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
R
q
JA
Continuous Drain
Current R (Note 2)
T = 25°C
A
−9
−7
D
q
JA
T = 85°C
A
Power Dissipation
(Note 2)
T = 25°C
A
P
D
0.84
W
(Note: Microdot may be in either location)
R
q
JA
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
−46
A
A
p
ORDERING INFORMATION
Operating Junction and Storage Temperature
T ,
stg
−55 to
+150
°C
J
T
†
Device
Package
Shipping
ESD (HBM, JESD22−A114)
V
5000
−3
V
A
ESD
NTTFS3A08PZTAG
WDFN8
(Pb−Free)
1500 / Tape &
Reel
Source Current (Body Diode)
I
S
NTTFS3A08PZTWG
WDFN8
(Pb−Free)
5000 / Tape &
Reel
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
October, 2012 − Rev. 2
NTTFS3A08P/D