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NTTFS015P03P8ZTWG

更新时间： 2024-09-14 11:11:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 222K
描述
MOSFET，单 -30V P 沟道

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NTTFS015P03P8ZTWG 数据手册

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NTTFS015P03P8Z  
MOSFET – Power, Single,  
P-Channel, m8FL  
-30 V, 7.5 mW  
Features  
• Ultra Low R  
www.onsemi.com  
to Improve System Efficiency  
DS(on)  
• Advanced Package Technology in 3.3x3.3mm for Space Saving and  
Excellent Thermal Conduction  
V
R
I
D
(BR)DSS  
DS(on)  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
7.5 mW @ −10 V  
12 mW @ −4.5 V  
−30 V  
−47.6 A  
Typical Applications  
• Power Load Switch  
S (1, 2, 3)  
• Protection: Reverse Current, Over Voltage, and Reverse Negative  
Voltage  
• Battery Management  
G (4)  
P−Channel  
MOSFET  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
−30  
Unit  
V
D (5, 6, 7, 8)  
V
DSS  
Gate−to−Source Voltage  
V
"25  
−47.6  
−34.4  
33.8  
V
GS  
MARKING  
DIAGRAM  
Continuous Drain Cur-  
T
T
T
= 25°C  
= 85°C  
= 25°C  
I
A
C
C
C
D
rent R  
(Notes 1, 2)  
q
JC  
1
Steady  
State  
1
S
S
S
G
D
D
D
D
Power Dissipation R  
(Notes 1, 2)  
P
W
A
q
D
JC  
15P3  
AYWWG  
G
WDFN8  
(m8FL)  
CASE 511AB  
Continuous Drain Cur-  
rent R (Notes 1, 2)  
T = 25°C  
A
I
−13.4  
−9.6  
2.66  
D
q
JA  
T = 85°C  
A
Steady  
State  
15P3  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
Power Dissipation R  
(Notes 1, 2)  
T = 25°C  
A
P
W
q
D
JA  
WW  
G
= Work Week  
= Pb−Free Package  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
−195  
A
A
p
Operating Junction and Storage Temperature  
T , T  
−55 to  
150  
°C  
J
stg  
(Note: Microdot may be in either location)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
ORDERING INFORMATION  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
†
Device  
Package  
Shipping  
NTTFS015P03P8ZTAG  
WDFN8 1500 / Tape &  
THERMAL RESISTANCE MAXIMUM RATINGS  
(Pb−Free) Reel  
Parameter  
Symbol  
Value  
Unit  
NTTFS015P03P8ZTWG WDFN8 3000 / Tape &  
(Pb−Free) Reel  
Junction−to−Case − Steady State (Drain)  
R
3.7  
°C/W  
q
JC  
(Note 2)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Junction−to−Ambient − Steady State (Note 2)  
R
47  
°C/W  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 1 in , 2 oz. Cu pad. Assuming a  
76mm x 76mm x 1.6mm board.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
June, 2019 − Rev. 0  
NTTFS015P03P8Z/D  
 
1234567

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