Datasheet > NTTFS3A08PZ

NTTFS3A08PZ

更新时间： 2024-11-25 01:18:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	127K
描述
-20 V, -15 A, Single P-Channel, 8FL

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中文翻译

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NTTFS3A08PZ 数据手册

NTTFS3A08PZ

Power MOSFET

−20 V, −15 A, Single P−Channel, m8FL

Features

• Ultra Low R

to Minimize Conduction Losses

• m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal

DS(on)

Conduction

http://onsemi.com

• ESD Protection Level of 5 kV per JESD22−A114

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

MAX

I MAX

(BR)DSS

DS(on)

Compliant

6.7 mW @ −4.5 V

9.0 mW @ −2.5 V

−20 V

−15 A

Applications

• Battery Switch

• High Side Load Switch

• Optimized for Power Management Applications for Portable

Products such as Media Tablets, Ultrabook PCs and Cellphones

P−Channel MOSFET

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol Value Unit

−20

DSS

Gate−to−Source Voltage

Continuous Drain

T = 25°C

−15

−11

2.3

Current R

(Note 1)

T = 85°C

MARKING DIAGRAM

Power Dissipation R

(Note 1)

T = 25°C

3A08

AYWWG

WDFN8

(m8FL)

CASE 511AB

Continuous Drain

T = 25°C

−22

−16

4.9

Current R

(Note 1)

≤ 10 s

T = 85°C

Steady

State

Power Dissipation

≤ 10 s (Note 1)

T = 25°C

3A08

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Continuous Drain

Current R (Note 2)

T = 25°C

−9

−7

T = 85°C

Power Dissipation

(Note 2)

T = 25°C

0.84

(Note: Microdot may be in either location)

Pulsed Drain Current

T = 25°C, t = 10 ms

−46

ORDERING INFORMATION

Operating Junction and Storage Temperature

T ,

stg

−55 to

+150

°C

†

Device

Package

Shipping

ESD (HBM, JESD22−A114)

5000

−3

ESD

NTTFS3A08PZTAG

WDFN8

(Pb−Free)

1500 / Tape &

Reel

Source Current (Body Diode)

NTTFS3A08PZTWG

WDFN8

(Pb−Free)

5000 / Tape &

Reel

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

Publication Order Number:

October, 2012 − Rev. 2

NTTFS3A08P/D

12 3 4 5 6

中文翻译

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与NTTFS3A08PZ相关器件

型号	品牌	获取价格	描述	数据表
NTTFS3A08PZTAG	ONSEMI	获取价格	-20 V, -15 A, Single P-Channel, 8FL
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NTTFS4800NTAG	ONSEMI	获取价格	Power MOSFET 30 V, 32 A, Single N−Chann
NTTFS4800NTWG	ONSEMI	获取价格	Power MOSFET 30 V, 32 A, Single N−Chann
NTTFS4821N	ONSEMI	获取价格	Power MOSFET 30 V, 57 A, Single N−Channel, u8FL
NTTFS4821NTAG	ONSEMI	获取价格	Power MOSFET 30 V, 57 A, Single N−Channel, u8FL
NTTFS4821NTWG	ONSEMI	获取价格	Power MOSFET 30 V, 57 A, Single N−Channel, u8FL
NTTFS4823N	ONSEMI	获取价格	Power MOSFET 30 V, 50 A, Single N−Channel, 8FL

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