MOSFET - Power, Single
N-Channel, m8FL
60 V, 20.3 mW, 27 A
NTTFS020N06C
Features
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• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(BR)DSS
DS(on)
Compliant
60 V
20.3 mW @ 10 V
27 A
Typical Applications
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
N−Channel
D (5 − 8)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
G (4)
V
DSS
Gate−to−Source Voltage
V
GS
20
V
S (1, 2, 3)
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
27
A
C
D
q
JC
MARKING DIAGRAM
T
C
19
(Notes 1, 3)
Steady
State
1
1
Power Dissipation
T
C
P
31
W
A
S
S
S
G
D
D
D
D
D
R
(Note 1)
20NC
AYWWG
G
q
JC
WDFN8
(m8FL)
CASE 511AB
T
C
= 100°C
15
Continuous Drain
Current R
T = 25°C
A
I
D
7
q
JA
T = 100°C
A
5
(Notes 1, 2, 3)
Steady
State
20NC = Specific Device Code
Power Dissipation
T = 25°C
A
P
2.5
1.2
128
W
D
A
Y
= Assembly Location
= Year
= Work Week
R
(Notes 1, 2)
q
JA
T = 100°C
A
WW
G
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
= Pb−Free Package
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
(Note: Microdot may be in either location)
Source Current (Body Diode)
I
25
17
A
S
ORDERING INFORMATION
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 5.7 A)
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
L(pk)
Lead Temperature Soldering Reflow for Sol-
dering Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
January, 2020 − Rev. 0
NTTFS020N06C/D