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NTTFS020N06CTAG PDF预览

NTTFS020N06CTAG

更新时间: 2024-11-01 11:13:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 223K
描述
Single N−Channel Power MOSFET 60V, 27A, 20.3mΩ in u8FL

NTTFS020N06CTAG 数据手册

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MOSFET - Power, Single  
N-Channel, m8FL  
60 V, 20.3 mW, 27 A  
NTTFS020N06C  
Features  
www.onsemi.com  
Small Footprint (3.3 x 3.3 mm) for Compact Design  
Low R  
to Minimize Conduction Losses  
DS(on)  
Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
(BR)DSS  
DS(on)  
Compliant  
60 V  
20.3 mW @ 10 V  
27 A  
Typical Applications  
Power Tools, Battery Operated Vacuums  
UAV/Drones, Material Handling  
BMS/Storage, Home Automation  
NChannel  
D (5 8)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
60  
Unit  
V
G (4)  
V
DSS  
GatetoSource Voltage  
V
GS  
20  
V
S (1, 2, 3)  
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
27  
A
C
D
q
JC  
MARKING DIAGRAM  
T
C
19  
(Notes 1, 3)  
Steady  
State  
1
1
Power Dissipation  
T
C
P
31  
W
A
S
S
S
G
D
D
D
D
D
R
(Note 1)  
20NC  
AYWWG  
G
q
JC  
WDFN8  
(m8FL)  
CASE 511AB  
T
C
= 100°C  
15  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
7
q
JA  
T = 100°C  
A
5
(Notes 1, 2, 3)  
Steady  
State  
20NC = Specific Device Code  
Power Dissipation  
T = 25°C  
A
P
2.5  
1.2  
128  
W
D
A
Y
= Assembly Location  
= Year  
= Work Week  
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
WW  
G
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
= PbFree Package  
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
+175  
°C  
J
stg  
(Note: Microdot may be in either location)  
Source Current (Body Diode)  
I
25  
17  
A
S
ORDERING INFORMATION  
Single Pulse DraintoSource Avalanche  
E
AS  
mJ  
Energy (I  
= 5.7 A)  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
L(pk)  
Lead Temperature Soldering Reflow for Sol-  
dering Purposes (1/8from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
January, 2020 Rev. 0  
NTTFS020N06C/D  
 

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