Datasheet > NTTFS3D7N06HLTWG

NTTFS3D7N06HLTWG

更新时间： 2024-11-02 11:14:27

品牌	Logo	应用领域
安森美 - ONSEMI		栅
页数	文件大小	规格书
7页	501K
描述
N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 103 A, 3.9 mΩ

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中文翻译

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NTTFS3D7N06HLTWG 数据手册

MOSFET - Single N-Channel

60 V, 3.9 mW, 103 A

NTTFS3D7N06HL

Features

• Max R

= 3.9 mW at V = 10 V, I = 23 A

GS D

DS(on)

= 5.2 mW at V = 4.5 V, I = 18 A

DS(on)

www.onsemi.com

• High Performance Technology for Extremely Low R

DS(on)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAX

I MAX

(BR)DSS

DS(ON)

Typical Applications

3.9 mW @ 10 V

5.2 mW @ 4.5 V

60 V

103 A

• DC−DC Buck Converters

• Point of Load

• High Efficiency Load Switch and Low Side Switching

• Oring FET

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

N−CHANNEL MOSFET

Gate−to−Source Voltage

Continuous Drain

= 25°C

103

Current R

(Note 1)

Steady

State

Power Dissipation

(Note 1)

Continuous Drain

Current R

T = 25°C

Steady

State

(Notes 1, 2)

Power Dissipation

2.2

WDFN8

(Notes 1, 2)

3.3X3.3, 0.65P

CASE 483AW

Pulsed Drain Current

T = 25°C, t = 10 ms

658

Operating Junction and Storage Temperature

Range

T , T

−55 to

+150

°C

stg

MARKING DIAGRAM

Source Current (Body Diode)

S3D7

AYWWZZ

Single Pulse Drain−to−Source Avalanche

Energy (I = 40 A, L = 0.1 mH) (Note 3)

Lead Temperature Soldering Reflow for Sol-

dering Purposes (1/8″ from case for 10 s)

260

°C

S3D7 = Specific Device Code

= Assembly Plant Code

= Numeric Year Code

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

WW = Work Week Code

ZZ = Assembly Lot Code

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Value

1.5

Unit

ORDERING INFORMATION

Junction−to−Case − Steady State (Note 1)

Junction−to−Ambient − Steady State (Note 1)

°C/W

Device

NTTFS3D7N06HLTWG

Package

Shipping†

54.8

WDFN8

3000 /

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

(Pb−Free) Tape & Reel

2. Surface−mounted on FR4 board using 1 in pad size, 1 oz. Cu pad.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

3. E of 80 mJ is based on started T = 25°C, I = 40 A, V = 60 V, V =

10 V. 100% test at I = 40 A.

Publication Order Number:

October, 2020 − Rev. 2

NTTFS3D7N06HL/D

12 3 4 5 6 7

中文翻译

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