NTTFS008N04C
Power MOSFET
40 V, 7.1 mW, 48 A, Single N−Channel
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
DS(on)
www.onsemi.com
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
40 V
8.5 mW @ 10 V
48 A
V
DSS
Gate−to−Source Voltage
V
GS
20
V
N−Channel
D (5 − 8)
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
48
A
C
D
q
JC
T
C
27
(Notes 1, 2, 3, 4)
Steady
State
Power Dissipation
T
C
P
38
W
A
D
R
(Notes 1, 2, 3)
q
JC
T
C
= 100°C
12
G (4)
Continuous Drain
Current R
T = 25°C
A
I
D
14
q
JA
T = 100°C
A
10
(Notes 1, 3, 4)
Steady
State
S (1, 2, 3)
Power Dissipation
T = 25°C
A
P
3.1
1.5
193
W
D
R
(Notes 1, 3)
q
JA
T = 100°C
A
MARKING DIAGRAM
1
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
1
S
S
S
G
D
D
D
D
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
08NC
AYWWG
G
WDFN8
(m8FL)
CASE 511AB
Source Current (Body Diode)
I
31
75
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 2.9 A)
L(pk)
08NC = Specific Device Code
A
Y
= Assembly Location
= Year
= Work Week
Lead Temperature for Soldering Purposes
T
260
°C
L
(1/8″ from case for 10 s)
WW
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Parameter
Symbol
Value
4
Unit
Junction−to−Case − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 3)
R
°C/W
q
JC
R
48.6
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
January, 2019 − Rev. 0
NTTFS008N04C/D