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NTTFS008N04CTAG PDF预览

NTTFS008N04CTAG

更新时间: 2024-09-14 11:15:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 209K
描述
Power MOSFET, Single N-Channel, 40 V, 8.5 mOhms, 48 A

NTTFS008N04CTAG 数据手册

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NTTFS008N04C  
Power MOSFET  
40 V, 7.1 mW, 48 A, Single NChannel  
Features  
Small Footprint (3.3 x 3.3 mm) for Compact Design  
Low R  
to Minimize Conduction Losses  
Low Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
These Devices are PbFree and are RoHS Compliant  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
Parameter  
DraintoSource Voltage  
Symbol  
Value  
40  
Unit  
V
40 V  
8.5 mW @ 10 V  
48 A  
V
DSS  
GatetoSource Voltage  
V
GS  
20  
V
NChannel  
D (5 8)  
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
48  
A
C
D
q
JC  
T
C
27  
(Notes 1, 2, 3, 4)  
Steady  
State  
Power Dissipation  
T
C
P
38  
W
A
D
R
(Notes 1, 2, 3)  
q
JC  
T
C
= 100°C  
12  
G (4)  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
14  
q
JA  
T = 100°C  
A
10  
(Notes 1, 3, 4)  
Steady  
State  
S (1, 2, 3)  
Power Dissipation  
T = 25°C  
A
P
3.1  
1.5  
193  
W
D
R
(Notes 1, 3)  
q
JA  
T = 100°C  
A
MARKING DIAGRAM  
1
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
1
S
S
S
G
D
D
D
D
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
+175  
°C  
J
stg  
08NC  
AYWWG  
G
WDFN8  
(m8FL)  
CASE 511AB  
Source Current (Body Diode)  
I
31  
75  
A
S
Single Pulse DraintoSource Avalanche  
E
AS  
mJ  
Energy (I  
= 2.9 A)  
L(pk)  
08NC = Specific Device Code  
A
Y
= Assembly Location  
= Year  
= Work Week  
Lead Temperature for Soldering Purposes  
T
260  
°C  
L
(1/8from case for 10 s)  
WW  
G
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
= PbFree Package  
(Note: Microdot may be in either location)  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Parameter  
Symbol  
Value  
4
Unit  
JunctiontoCase Steady State (Note 3)  
JunctiontoAmbient Steady State (Note 3)  
R
°C/W  
q
JC  
R
48.6  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD5112 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
January, 2019 Rev. 0  
NTTFS008N04C/D  
 

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