Datasheet > NTTFS008P03P8Z

NTTFS008P03P8Z

更新时间： 2024-09-14 11:14:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	461K
描述
MOSFET, Power 30V P-Channel PQFN8 3.3X3.3

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NTTFS008P03P8Z 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

P-Channel, WDFN8

-30 V, 3.8 mW, -96 A

(BR)DSS

DS(on)

3.8 mW @ −10 V

6.5 mW @ −4.5 V

−30 V

−96 A

S (1, 2, 3)

NTTFS008P03P8Z

Features

G (4)

P−Channel

• Ultra Low R

to Improve System Efficiency

• Advanced Package Technology in 3.3x3.3mm for Space Saving and

MOSFET

DS(on)

Excellent Thermal Conduction

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

D (5, 6, 7, 8)

MARKING

DIAGRAM

Typical Applications

• Power Load Switch

• Protection: Reverse Current, Over Voltage, and Reverse Negative

8P03

AYWWZZ

Voltage

WDFN8

CASE 483AW

• Battery Management

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

8P03

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Lot Traceability Code

Parameter

Drain−to−Source Voltage

Symbol

Value

−30

"25

−96

−69

Unit

DSS

Gate−to−Source Voltage

Continuous Drain Cur-

= 25°C

= 85°C

= 25°C

rent R

(Notes 1, 2)

Steady

State

ORDERING INFORMATION

Power Dissipation R

(Notes 1, 2)

†

Device

NTTFS008P03P8Z

Package

Shipping

Continuous Drain Cur-

rent R (Notes 1, 2)

T = 25°C

−22

−16

2.67

WDFN8 3000 / Tape &

(Pb−Free) Reel

T = 85°C

Steady

State

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Power Dissipation R

(Notes 1, 2)

T = 25°C

Pulsed Drain Current

T = 25°C, t = 10 ms

−418

Operating Junction and Storage Temperature

Range

T , T

−55 to

150

°C

stg

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State (Drain)

(Note 2)

2.5

°C/W

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 1 in , 2 oz. Cu pad. Assuming a

76mm x 76mm x 1.6mm board.

Publication Order Number:

March, 2023 − Rev. 7

NTTFS008P03P8Z/D

12 3 4 5 6 7

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与NTTFS008P03P8Z相关器件

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