5秒后页面跳转
捷配首页

Datasheet > NTTFD1D8N02P1E
NTTFD1D8N02P1E PDF预览

NTTFD1D8N02P1E

更新时间： 2023-09-03 20:29:28
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
11页 497K
描述
MOSFET, Power, 25V Dual N-Channel Power Clip

阅读下载

中文翻译

获取价格

NTTFD1D8N02P1E 数据手册

 浏览型号NTTFD1D8N02P1E的Datasheet PDF文件第2页浏览型号NTTFD1D8N02P1E的Datasheet PDF文件第3页浏览型号NTTFD1D8N02P1E的Datasheet PDF文件第4页浏览型号NTTFD1D8N02P1E的Datasheet PDF文件第5页浏览型号NTTFD1D8N02P1E的Datasheet PDF文件第6页浏览型号NTTFD1D8N02P1E的Datasheet PDF文件第7页 
MOSFET - Power, N-Channel  
PowerTrench[ Power Clip  
25 V Asymmetric Dual  
NTTFD1D8N02P1E  
Features  
• Small Footprint (3.3mm x 3.3mm) for Compact Design  
www.onsemi.com  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
• These Devices are Pb−Free and are RoHS Compliant  
FET  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
Typical Applications  
• DC−DC Converters  
• System Voltage Rails  
4.2 mW @ 10 V  
5.3 mW @ 4.5 V  
1.4 mW @ 10 V  
1.8 mW @ 4.5 V  
Q1  
25 V  
61 A  
Q2  
25 V  
126 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Q1  
Q2  
Unit  
V
V
DSS  
25  
25  
ELECTRICAL CONNECTION  
V
GS  
+16  
−12  
+16  
−12  
V
Continuous Drain  
Current R  
I
61  
44  
25  
126  
91  
A
T
T
= 25°C  
= 85°C  
D
C
q
JC  
Steady  
(Note 3)  
C
State  
Power Dissipation  
P
36  
W
A
D
D
D
T
A
= 25°C  
R
(Note 3)  
q
JC  
Continuous Drain  
Current R  
I
D
15  
11  
30  
21  
T
A
= 25°C  
= 85°C  
MARKING  
DIAGRAM  
q
JA  
T
A
Steady  
State  
(Notes 1, 3)  
Power Dissipation  
P
I
1.6  
2.0  
W
A
T
A
= 25°C  
R
(Notes 1, 3)  
q
JA  
Continuous Drain  
Current R  
11  
8
21  
15  
T
A
= 25°C  
= 85°C  
D
q
JA  
T
A
Steady  
State  
(Notes 2, 3)  
Power Dissipation  
P
0.8  
0.9  
W
T
A
= 25°C  
R
(Notes 2, 3)  
q
JA  
2EMN = Specific Device Code  
A
Y
WW  
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Assembly Lot Code  
Pulsed Drain Current  
T
= 25°C, t = 10 ms  
I
DM  
483  
861  
A
A
p
Single Pulse Drain−to−Source Avalanche  
E
AS  
37.3 150.  
1
mJ  
Energy  
Q1: I = 15.8 A , L = 0.3 mH (Note 4)  
L
pk  
Q2: I = 31.63 A , L = 0.3 mH (Note 4)  
L
pk  
Operating Junction and Storage Temperature T , T  
−55 to + 150  
°C  
°C  
J
stg  
ORDERING INFORMATION  
Lead Temperature for Soldering  
T
L
260  
Purposes (1/8″ from case for 10 s)  
†
Device  
Package  
Shipping  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
NTTFD1D8N02P1E  
PQFN8  
(Pb−Free)  
3000 / Tape &  
Reel  
2
1. Surface−mounted on FR4 board using a 1 in pad size, 2 oz. Cu pad.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
2. Surface−mounted on FR4 board using minimum pad size, 2 oz. Cu pad.  
3. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
Actual continuous current will be limited by thermal & electro−mechanical  
application board design. R  
is determined by the user’s board design.  
q
JC  
4. Q1 100% UIS tested at L = 0.1 mH, IAS = 24.2 A.  
Q2 100% UIS tested at L = 0.1 mH, IAS = 48.1 A.  
5. This device does not have ESD protection diode.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
February, 2020 − Rev. 1  
NTTFD1D8N02P1E/D  
 
1234567...11

中文翻译

下载PDF

与NTTFD1D8N02P1E相关器件

型号 品牌 获取价格 描述 数据表
NTTFD2D8N03P1E ONSEMI

获取价格

 		MOSFET, Power, 30V POWERTRENCH® Power Clip
NTTFD4D0N04HLTWG ONSEMI

获取价格

 		MOSFET, Power, 40V POWERTRENCH® Power Clip Ha
NTTFD4D1N03P1E ONSEMI

获取价格

 		Dual Power MOSFETs, N-Channel, Symmetric, 3x3
NTTFD9D0N06HLTWG ONSEMI

获取价格

 		MOSFET, Power, 60V POWERTRENCH® Power Clip Ha
NTTFS002N04CLTAG ONSEMI

获取价格

 		功率 MOSFET，40 V，2.2mOhm，142A，单 N 沟道
NTTFS002N04CTAG ONSEMI

获取价格

 		功率 MOSFET，40 V，2.4 mΩ，136 A，单 N 沟道
NTTFS004N04CTAG ONSEMI

获取价格

 		Single N-Channel Power MOSFET 40V, 77A, 4.9mΩ
NTTFS005N04CTAG ONSEMI

获取价格

 		Power MOSFET, Single N-Channel, 40 V, 5.6 mOhms, 69 A
NTTFS007P02P8 ONSEMI

获取价格

 		Power MOSFET, Single, P-Channel, -20V, 6.5mΩ,
NTTFS008N04CTAG ONSEMI

获取价格

 		Power MOSFET, Single N-Channel, 40 V, 8.5 mOhms, 48 A

与NTTFD1D8N02P1E相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证