Datasheet > NTTFS007P02P8

NTTFS007P02P8

更新时间： 2024-11-21 11:15:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	410K
描述
Power MOSFET, Single, P-Channel, -20V, 6.5mΩ, -56A, PQFN8 3x3

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NTTFS007P02P8 数据手册

DATA SHEET

www.onsemi.com

MOSFET – P-Channel,

POWERTRENCH⁾

MAX

I MAX

DS(on)

−20 V

6.5 mW @ −4.5 V

9.8 mW @ −2.5 V

20 mW @ −1.8 V

−56 A

-20 V, -56 A, 6.5 mW

NTTFS007P02P8

Pin 1

General Description

This P−Channel MOSFET is produced using onsemi’s advanced

POWERTRENCH process that has been optimized for R

switching performance and ruggedness.

DS(on)

Top

Features

Bottom

 Max R

= 6.5 mW at V = −4.5 V, I = −14 A

GS D

DS(on)

PQFN8 3.3X3.3, 0.65P

(Power 33)

= 9.8 mW at V = −2.5 V, I = −11 A

CASE 483AX

= 20 mW at V = −1.8 V, I = −9 A

 High Performance Trench Technology for Extremely Low R

 High Power and Current Handling Capability in a Widely Used

Surface Mount Package

DS(on)

PIN ASSIGNMENT

 This Device is Pb−Free, Halide Free and is RoHS Compliant

Applications

 Load Switch

 Battery Management

 Power Management

 Reverse Polarity Protection

MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted)

MARKING DIAGRAM

Symbol

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Ratings

−20

Unit

8

&Z&3&K

FDMC

6688P

−Continuous, T = 25C

−56

−14

−226

−Continuous, T = 25C (Note 1a)

−Pulsed (Note 3)

Power Dissipation

= 25C

2.3

= Assembly Plant Code

= 3−Digit Date−Code (YWW)

= 2−Digit Lot Traceability Code

T = 25C (Note 1a)

T , T

Operating and Storage Junction

Temperature Range

−55 to +150

C

STG

FDMC6688P = Specific Device Code

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

†

Device

Package

Shipping

THERMAL CHARACTERISTICS (T = 25C unless otherwise noted)

NTTFS007P02P8

PQFN8

(Power 33)

(Pb−Free)

3,000 /

Tape & Reel

Symbol

Parameter

Value

3.8

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance,

Junction to Ambient (Note 1a)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

 Semiconductor Components Industries, LLC, 2023

Publication Order Number:

April, 2023 − Rev. 0

NTTFS007P02P8/D

12 3 4 5 6 7

中文翻译

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