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NTTFD4D1N03P1E

更新时间： 2024-11-01 11:13:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
11页 351K
描述
Dual Power MOSFETs, N-Channel, Symmetric, 3x3mm, 30V/4.5mΩ, 54A 

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NTTFD4D1N03P1E 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power,  
FET  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
N-Channel, PowerTrench[  
Power Clip, Symmetric Dual  
30 V  
4.3 mW @ 10 V  
5.4 mW @ 4.5 V  
3.5 mW @ 10 V  
4.5 mW @ 4.5 V  
Q1  
30 V  
54 A  
54 A  
Q2  
30 V  
NTTFD4D1N03P1E  
Features  
• Latest 30 V MOSFET Technology with Optimized Figure−of−Merit  
ELECTRICAL CONNECTION  
• Less Junction Capacitance for High Switching Frequency Application  
• Lower Q /Q for Shoot−Through Preventing  
GD GS  
• Small Footprint (3.3mm x 3.3mm) for Compact Design  
• These Devices are Pb−Free and are RoHS Compliant  
Typical Applications  
• DC−DC Converters  
• System Voltage Rails  
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Q1  
Q2  
Unit  
V
V
DSS  
30  
30  
3EUN  
AYWW  
V
GS  
+16  
−12  
+16  
−12  
V
PIN1  
WQFN12  
3.3X3.3, 0.65P  
CASE 510CJ  
Continuous Drain  
Current R  
I
54  
38  
20  
54  
38  
20  
A
T
T
= 25°C  
= 85°C  
D
C
q
JC  
Steady  
State  
(Note 3)  
C
3EUN = Specific Device Code  
Power Dissipation  
P
W
A
D
D
D
T
C
= 25°C  
A
Y
WW  
= Assembly Location  
= Year  
R
(Note 3)  
q
JC  
Continuous Drain  
Current R  
I
D
15  
11  
15  
11  
T = 25°C  
A
= Work Week  
q
JA  
Steady T = 85°C  
State  
(Notes 1, 3)  
A
Power Dissipation  
P
I
1.7  
1.7  
W
A
T = 25°C  
A
ORDERING INFORMATION  
R
(Notes 1, 3)  
q
JA  
†
Continuous Drain  
Current R  
12  
8
12  
8
T = 25°C  
A
Device  
NTTFD4D1N03P1E  
Package  
Shipping  
D
q
JA  
WQFN12  
(Pb−Free)  
3000 / Tape &  
Reel  
Steady T = 85°C  
State  
(Notes 2, 3)  
A
Power Dissipation  
P
1.0  
1.0  
W
T = 25°C  
A
R
(Notes 2, 3)  
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Pulsed Drain Current T = 25°C, t = 10 ms  
I
DM  
408  
74  
408  
74  
A
A
p
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy  
Q1: I = 7 A , L = 3 mH (Note 4)  
L
pk  
Q2: I = 7 A , L = 3 mH (Note 4)  
L
pk  
Operating Junction and Storage Temperature T , T  
−55 to + 150  
°C  
°C  
J
stg  
Lead Temperature for Soldering  
T
L
260  
Purposes (1/8″ from case for 10 s)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
2
1. Surface−mounted on FR4 board using a 1 in pad size, 2 oz. Cu pad.  
2. Surface−mounted on FR4 board using minimum pad size, 2 oz. Cu pad.  
3. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
Actual continuous current will be limited by thermal & electro−mechanical  
application board design. R  
is determined by the user’s board design.  
q
JC  
4. Q1 100% UIS tested at L = 3 mH, IAS = 7 A.  
Q2 100% UIS tested at L = 3 mH, IAS = 7 A.  
5. This device is Class 1B ESD HBM Rating.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
November, 2021 − Rev. 0  
NTTFD4D1N03P1E/D  
 
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