Datasheet > NTTFD9D0N06HLTWG

NTTFD9D0N06HLTWG

更新时间： 2024-09-14 11:14:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	450K
描述
MOSFET, Power, 60V POWERTRENCH® Power Clip Half Bridge Configuration

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中文翻译

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数据手册

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NTTFD9D0N06HLTWG 数据手册

MOSFET - Symmetrical

Dual N-Channel

60 V, 9 mW, 38 A

NTTFD9D0N06HL

General Description

This device includes two specialized N−Channel MOSFETs in

a dual package. The switch node has been internally connected to

enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q2) and synchronous (Q1) have been designed

to provide optimal power efficiency.

www.onsemi.com

MAX

I MAX

(BR)DSS

DS(ON)

9 mW @ 10 V

60 V

38 A

Features

13 mW @ 4.5 V

Q1: N−Channel

• Max r

= 9.0 mW at V = 10 V, I = 10 A

GS D

DS(on)

ELECTRICAL CONNECTION

= 13 mW at V = 4.5, I = 8.0 A

DS(on)

GND

LSG

V+

SW GND

GND

Q2: N−Channel

LSG

V+

• Max r

= 9.0 mW at V = 10 V, I = 10 A

GS D

DS(on)

• Max r

= 13 mW at V = 4.5, I = 8.0 A

GS D

V+

DS(on)

V+

HSG V+

HSG

• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in

Lower Switching Losses

Dual N-Channel MOSFET

PIN1

• RoHS Compliant

Typical Applications

• Computing

• Communications

• General Purpose Point of Load

PIN1

Bottom

Top

PIN DESCRIPTION

WQFN12, 3x3

CASE 510CJ

1, 11, 12

Name

GND (LSS)

LSG

Description

Low Side Source

MARKING DIAGRAM

Low Side Gate

3, 4, 5, 6

V + (HSD)

HSG

High Side Drain

D9D0

AYWWZZ

High Side Gate

8, 9, 10

Switching Node, Low Side Drain

D9D0 = Specific Device Code

= Assembly Plant Code

= Numeric Year Code

WW = Work Week Code

ZZ = Assembly Lot Code

ORDERING INFORMATION

Device

NTTFD9D0N06HLTWG

Package

Shipping†

WQFN12

3000 /

(Pb−Free) Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

May, 2020 − Rev. 1

NTTFD9D0N06HL/D

12 3 4 5 6 7...9

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