Datasheet > NTTFD022N10C

NTTFD022N10C

更新时间： 2023-09-03 20:32:38

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	445K
描述
MOSFET, Power, 100V POWERTRENCH® Power Clip Half Bridge Configuration

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中文翻译

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数据手册

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NTTFD022N10C 数据手册

MOSFET - Single N-Channel

100 V, 25 mW, 24 A

NTTFD022N10C

General Description

This device includes two specialized N−Channel MOSFETs in a

dual package. The switch node has been internally connected to enable

easy placement and routing of synchronous buck converters. The

control MOSFET (Q2) and synchronous (Q1) have been designed to

provide optimal power efficiency.

www.onsemi.com

Features

MAX

I MAX

(BR)DSS

DS(ON)

Q1: N−Channel

25 mW @ 10 V

61 mW @ 6 V

100 V

24 A

• Max r

= 25 mW at V = 10 V, I = 7.8 A

GS D

= 61 mW at V = 6, I = 3.9 A

DS(on)

Q2: N−Channel

• Max r

= 25 mW at V = 10 V, I = 7.8 A

GS D

DS(on)

ELECTRICAL CONNECTION

• Max r

= 61 mW at V = 6, I = 3.9 A

GS D

DS(on)

GND

LSG

V+

SW GND

GND

• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in

Lower Switching Losses

• RoHS Compliant

LSG

V+

HSG V+

HSG

Applications

Dual N-Channel MOSFET

PIN1

• Computing

• Communications

• General Purpose Point of Load

PIN DESCRIPTION

1, 11, 12

Name

GND (LSS)

LSG

Description

Low Side Source

PIN1

Bottom

Top

Low Side Gate

Power Clip 33 Symmetric

(WQFN12)

3, 4, 5, 6

V + (HSD)

HSG

High Side Drain

CASE 510CJ

High Side Gate

8, 9, 10

Switching Node, Low Side Drain

MARKING DIAGRAM

D022

AYWWZZ

D022 = Specific Device Code

= Assembly Plant Code

= Numeric Year Code

WW = Work Week Code

ZZ = Assembly Lot Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2

of this data sheet.

Publication Order Number:

January, 2021 − Rev. 3

NTTFD022N10C/D

12 3 4 5 6 7...9

中文翻译

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