Datasheet > NTTFD021N08C

NTTFD021N08C

更新时间： 2024-11-02 11:15:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	445K
描述
MOSFET, Power, 80V POWERTRENCH® Power Clip Half Bridge Configuration

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中文翻译

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数据手册

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NTTFD021N08C 数据手册

MOSFET - Single N-Channel

80 V, 21 mW, 24 A

NTTFD021N08C

General Description

This device includes two specialized N−Channel MOSFETs in a

dual package. The switch node has been internally connected to enable

easy placement and routing of synchronous buck converters. The

control MOSFET (Q2) and synchronous (Q1) have been designed to

provide optimal power efficiency.

www.onsemi.com

MAX

I MAX

Features

(BR)DSS

DS(ON)

Q1: N−Channel

21 mW @ 10 V

55 mW @ 6 V

80 V

24 A

• Max r

= 21 mW at V = 10 V, I = 7.8 A

GS D

= 55 mW at V = 6 V, I = 3.9 A

DS(on)

Q2: N−Channel

• Max r

= 21 mW at V = 10 V, I = 7.8 A

GS D

DS(on)

ELECTRICAL CONNECTION

• Max r

= 55 mW at V = 6 V, I = 3.9 A

GS D

DS(on)

GND

LSG

V+

SW GND

GND

• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in

Lower Switching Losses

• RoHS Compliant

LSG

V+

HSG V+

HSG

Applications

Dual N-Channel MOSFET

PIN1

• Computing

• Communications

• General Purpose Point of Load

PIN DESCRIPTION

1, 11, 12

Name

GND (LSS)

LSG

Description

Low Side Source

PIN1

Bottom

Top

Low Side Gate

Power Clip 33 Symmetric

(WQFN12)

3, 4, 5, 6

V + (HSD)

HSG

High Side Drain

CASE 510CJ

High Side Gate

8, 9, 10

Switching Node, Low Side Drain

MARKING DIAGRAM

D021

AYWWZZ

D021 = Specific Device Code

= Assembly Plant Code

= Numeric Year Code

WW = Work Week Code

ZZ = Assembly Lot Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2

of this data sheet.

Publication Order Number:

January, 2021 − Rev. 2

NTTFD021N08C/D

12 3 4 5 6 7...9

中文翻译

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