5秒后页面跳转
NTE339 PDF预览

NTE339

更新时间: 2024-11-02 04:36:03
品牌 Logo 应用领域
NTE 晶体射频双极晶体管放大器
页数 文件大小 规格书
2页 76K
描述
Silicon NPN Transistor RF Power Output

NTE339 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:2.01Is Samacsys:N
最大集电极电流 (IC):7 A集电极-发射极最大电压:24 V
配置:SINGLE最小直流电流增益 (hFE):3
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRPM-F4
元件数量:1端子数量:4
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
功耗环境最大值:100 W最大功率耗散 (Abs):100 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

NTE339 数据手册

 浏览型号NTE339的Datasheet PDF文件第2页 
NTE339  
Silicon NPN Transistor  
RF Power Output  
Description:  
The NTE339 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for use in large  
signal amplifier stages in industrial communications equipment operating at frequencies to 80MHz.  
D Specified 12.5 Volt, 50MHz Characteristics  
Output Power = 40 Watts  
Minimum Gain = 7.5dB  
Efficiency = 50%  
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)  
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48V  
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V  
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V  
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A  
Total Device Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W  
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 571mW/°C  
Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C  
Storage Temperatures Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C  
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.55°C/W  
Note 1. This device is designed for RF operation. The total device dissipation rating applies only  
when the device is operated as an RF amplifier.  
Electrical Characteristics: (TC = +25°C unless otherwise specified)  
Parameter  
Symbol  
Test Conditions  
Min Typ Max Unit  
OFF Characteristics  
CollectorEmitter Breakdown Voltage  
V
I = 200mA, I = 0, Note 2  
24  
48  
4
V
V
V
(BR)CEO  
C
B
V
I = 100mA, V = 0, Note 2  
C BE  
(BR)CES  
(BR)EBO  
EmitterBase Breakdown Voltage  
V
I = 0, I = 10mA  
C E  
Collector Cutoff Current  
I
V
= 15V, I = 0  
1.0 mA  
CBO  
CB  
CB  
E
I
V
V
V
P
= 15V, I = 0, T = +125°C  
10  
mA  
CES  
E
A
ON Characteristics  
DC Current Gain  
h
FE  
= 5V, I = 2.4A  
3
7
CE  
C
Dynamic Characteristics  
Output Capacitance  
C
ob  
= 12.5V, I = 0, f = 0.1 to 1.0MHz  
180 230 pF  
CB  
E
Functional Test  
CommonEmitter Amplifier Power Gain  
Collector Efficiency  
G
PE  
= 40W, V = 12.5V, f = 50MHz 7.5  
dB  
%
OUT  
CC  
η
50  
Note 2. Pulsed through 25mH inductor.  

与NTE339相关器件

型号 品牌 获取价格 描述 数据表
NTE340 NTE

获取价格

Silicon NPN Transistor RF Power Output, High Frequency
NTE341 NTE

获取价格

Silicon NPN Transistor RF Power Output
NTE342 NTE

获取价格

Silicon NPN Transistor RF Power Output (PO = 6W, 175MHz)
NTE343 NTE

获取价格

Silicon NPN Transistor RF Power Output (PO = 14W, 175MHz)
NTE344 NTE

获取价格

Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz
NTE345 NTE

获取价格

Silicon NPN Transistor RF Power Amp, Driver
NTE346 NTE

获取价格

Silicon NPN Transistor RF Power Transistor
NTE347 NTE

获取价格

Silicon NPN Transistor
NTE3470 NTE

获取价格

Integrated Circuit Floppy Disk Read Amplifier System
NTE348 NTE

获取价格

Silicon NPN Transistor RF Power Amp, Driver