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NTE339 PDF预览

NTE339

更新时间: 2024-11-20 04:36:03
品牌 Logo 应用领域
NTE 晶体射频双极晶体管放大器
页数 文件大小 规格书
2页 76K
描述
Silicon NPN Transistor RF Power Output

NTE339 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:2.01Is Samacsys:N
最大集电极电流 (IC):7 A集电极-发射极最大电压:24 V
配置:SINGLE最小直流电流增益 (hFE):3
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRPM-F4
元件数量:1端子数量:4
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
功耗环境最大值:100 W最大功率耗散 (Abs):100 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

NTE339 数据手册

 浏览型号NTE339的Datasheet PDF文件第2页 
NTE339  
Silicon NPN Transistor  
RF Power Output  
Description:  
The NTE339 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for use in large  
signal amplifier stages in industrial communications equipment operating at frequencies to 80MHz.  
D Specified 12.5 Volt, 50MHz Characteristics  
Output Power = 40 Watts  
Minimum Gain = 7.5dB  
Efficiency = 50%  
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)  
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48V  
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V  
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V  
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A  
Total Device Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W  
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 571mW/°C  
Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C  
Storage Temperatures Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C  
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.55°C/W  
Note 1. This device is designed for RF operation. The total device dissipation rating applies only  
when the device is operated as an RF amplifier.  
Electrical Characteristics: (TC = +25°C unless otherwise specified)  
Parameter  
Symbol  
Test Conditions  
Min Typ Max Unit  
OFF Characteristics  
CollectorEmitter Breakdown Voltage  
V
I = 200mA, I = 0, Note 2  
24  
48  
4
V
V
V
(BR)CEO  
C
B
V
I = 100mA, V = 0, Note 2  
C BE  
(BR)CES  
(BR)EBO  
EmitterBase Breakdown Voltage  
V
I = 0, I = 10mA  
C E  
Collector Cutoff Current  
I
V
= 15V, I = 0  
1.0 mA  
CBO  
CB  
CB  
E
I
V
V
V
P
= 15V, I = 0, T = +125°C  
10  
mA  
CES  
E
A
ON Characteristics  
DC Current Gain  
h
FE  
= 5V, I = 2.4A  
3
7
CE  
C
Dynamic Characteristics  
Output Capacitance  
C
ob  
= 12.5V, I = 0, f = 0.1 to 1.0MHz  
180 230 pF  
CB  
E
Functional Test  
CommonEmitter Amplifier Power Gain  
Collector Efficiency  
G
PE  
= 40W, V = 12.5V, f = 50MHz 7.5  
dB  
%
OUT  
CC  
η
50  
Note 2. Pulsed through 25mH inductor.  

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