生命周期: | Active | Reach Compliance Code: | unknown |
HTS代码: | 8542.39.00.01 | 风险等级: | 2.07 |
Is Samacsys: | N | 驱动类型: | FLOPPY |
接口集成电路类型: | READ CHANNEL | JESD-30 代码: | R-PDIP-T18 |
信道数量: | 1 | 功能数量: | 1 |
端子数量: | 18 | 最高工作温度: | 70 °C |
最低工作温度: | 封装主体材料: | PLASTIC/EPOXY | |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
认证状态: | Not Qualified | 最大供电电压: | 5.25 V |
最小供电电压: | 4.75 V | 标称供电电压: | 5 V |
电源电压1-最大: | 14 V | 电源电压1-分钟: | 10 V |
表面贴装: | NO | 温度等级: | COMMERCIAL |
端子形式: | THROUGH-HOLE | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTE348 | NTE |
获取价格 |
Silicon NPN Transistor RF Power Amp, Driver | |
NTE349 | NTE |
获取价格 |
Silicon NPN Transistor RF Power Amp, Driver | |
NTE350 | NTE |
获取价格 |
Silicon NPN Transistor RF Power Amp, Driver | |
NTE350F | NTE |
获取价格 |
Silicon NPN Transistor RF Power AMP | |
NTE351 | NTE |
获取价格 |
Silicon NPN Transistor RF Power Amp, Driver | |
NTE352 | NTE |
获取价格 |
Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount) | |
NTE353 | NTE |
获取价格 |
Silicon NPN Transistor RF Power Output PO = 4W @ 175MHz | |
NTE354 | NTE |
获取价格 |
Silicon NPN Transistor RF Power Output PO = 15W @ 175MHz | |
NTE355 | NTE |
获取价格 |
Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz | |
NTE356 | NTE |
获取价格 |
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, PNP |