NTE355

更新时间： 2024-11-22 22:50:55

品牌	Logo	应用领域
NTE		晶体晶体管射频
页数	文件大小	规格书
2页	23K
描述
Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz

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NTE355 数据手册

NTE355

Silicon NPN Transistor

RF Power Output

P_O= 30W @ 175MHz

Description:

The NTE355 is designed for 12.5 Volt VHF large–signal amplifier applications required in military and

industrial equipment operating to 250MHz.

Features:

D Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with

the Optimum in Transistor Ruggedness.

D Low lead Inductance Stripline Packaging for Easier Design and Increased Broadband Capabilities

D Flange Package for Easy Mounting and Better Thermal Conductivity to Heat Sink.

D Exceptional Power Output Stability versus Temperature.

Absolute Maximum Ratings:

Collector–Emitter Voltage, V_CEO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V

Collector–Base Voltage, V_CBO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V

Emitter–Base Voltage, V_EBO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V

Collector Current–Continuous, I_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A

Total Device Dissipation (T_C= +25°C, Note 1), P_D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 228mW/°C

Storage Temperature Range, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Note 1. This device is designed for RF operation. The total device dissipation rating applies only

when the device is operated as an RF amplifier.

Electrical Characteristics: (T_C= +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage

I = 50mA, I = 0

–

(BR)CEO

I = 15mA, V = 0

C BE

(BR)CES

Emitter–Base Breakdown Voltage

Collector Cutoff Current

I = 5mA, I = 0

E C

(BR)EBO

= 15V, I = 0

–

1.0 mA

10 mA

CBO

= 15V, V = 0, T = +55°C

–

CES

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