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NGTB40N60FL2WG

更新时间： 2024-09-16 01:17:43
品牌 Logo 应用领域
安森美 - ONSEMI 栅双极性晶体管
页数 文件大小 规格书
10页 145K
描述
IGBT - Field Stop II

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中文翻译

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NGTB40N60FL2WG 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：,Reach Compliance Code：compliant
风险等级：5.21最大集电极电流 (IC)：80 A
集电极-发射极最大电压：600 V门极发射器阈值电压最大值：6.5 V
门极-发射极最大电压：20 VJESD-609代码：e3
最高工作温度：175 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：366 W子类别：Insulated Gate BIP Transistors
表面贴装：NO端子面层：Tin (Sn)
Base Number Matches：1

NGTB40N60FL2WG 数据手册

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NGTB40N60FL2WG  
IGBT - Field Stop II  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Field Stop II Trench construction, and provides superior  
performance in demanding switching applications, offering both low  
on state voltage and minimal switching loss. The IGBT is well suited  
for UPS and solar applications. Incorporated into the device is a soft  
and fast co−packaged free wheeling diode with a low forward voltage.  
www.onsemi.com  
Features  
• Extremely Efficient Trench with Field Stop Technology  
40 A, 600 V  
• T  
= 175°C  
Jmax  
VCEsat = 1.7 V  
• Soft Fast Reverse Recovery Diode  
• Optimized for High Speed Switching  
• 5 ms Short−Circuit Capability  
• These are Pb−Free Devices  
EOFF = 0.44 mJ  
C
Typical Applications  
• Solar Inverters  
• Uninterruptible Power Supplies (UPS)  
• Welding  
G
E
ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
V
Value  
Unit  
V
Collector−emitter voltage  
600  
CES  
Collector current  
@ TC = 25°C  
I
A
C
80  
40  
TO−247  
CASE 340AL  
G
@ TC = 100°C  
C
E
Diode Forward Current  
@ TC = 25°C  
I
A
F
80  
40  
@ TC = 100°C  
MARKING DIAGRAM  
Diode Pulsed Current  
I
160  
160  
5
A
A
FM  
T
Limited by T Max  
PULSE  
J
Pulsed collector current, T  
I
pulse  
CM  
limited by T  
Jmax  
Short−circuit withstand time  
= 15 V, V = 400 V,  
t
ms  
SC  
V
GE  
CE  
40N60FL2  
AYWWG  
T ≤ +150°C  
J
Gate−emitter voltage  
V
GE  
$20  
$30  
V
V
Transient gate−emitter voltage  
(T  
PULSE  
= 5 ms, D < 0.10)  
Power Dissipation  
P
D
W
@ TC = 25°C  
@ TC = 100°C  
366  
183  
A
Y
= Assembly Location  
= Year  
Operating junction temperature  
range  
T
J
−55 to +175  
°C  
WW  
G
= Work Week  
= Pb−Free Package  
Storage temperature range  
T
−55 to +175  
260  
°C  
°C  
stg  
ORDERING INFORMATION  
Lead temperature for soldering, 1/8″  
from case for 5 seconds  
T
SLD  
Device  
NGTB40N60FL2WG  
Package  
Shipping  
30 Units / Rail  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
TO−247  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
September, 2016 − Rev. 2  
NGTB40N60FL2W/D  
1234567...10

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